Comparative ellipsometric and ion beam analytical studies on ion beam crystallized silicon implanted with Zn and Pb ions

Zn and Pb ions were implanted at 100 keV into silicon, in order to form amorphous layers. Ion beam induced epitaxial crystallization of the amorphous silicon was induced at 400 °C using 3 MeV Si+ ion beam. Rutherford Backscattering Spectrometry and channeling techniques were applied to assess the complete amorphization and to follow the epitaxial crystallization and the redistribution of the Zn and Pb atoms. Spectroscopic ellipsometry measurements were performed to determine the thickness of the surface oxide layer and that of the amorphous silicon layers. The evaluation of the ellipsometry data was done using the Tauc-Lorentz model for description of the complex dielectric function of the amorphous silicon. A dose of 3 MeV Si+ ion beam was sufficient for almost complete recrystallization of the ion implantation amorphized silicon layer.