کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1672885 | 1008941 | 2008 | 6 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Optical emission spectroscopy study of positive direct current bias enhanced diamond nucleation Optical emission spectroscopy study of positive direct current bias enhanced diamond nucleation](/preview/png/1672885.png)
High nucleation density and crystalline diamond films were deposited on a mirror-polished Si(100) substrate by horizontal microwave plasma chemical vapor deposition using a two step process consisting of positive direct current (dc) bias enhanced nucleation and growth. Optical emission spectroscopy was employed to investigate in situ the plasma emission characterization during positive biasing process. Emission lines from the Balmer series of atomic hydrogen, molecular hydrogen, CH, C2, and Ar were observed in the visible and ultraviolet ranges when CH4, H2, and Ar were used as the reactant gases. The dependence of plasma emission spectra on the deposition parameters, such as biasing voltage, methane concentration and working pressure was investigated. The relative concentrations of neutral atomic hydrogen were estimated by using the Ar emission at 750.4 nm as an actinometer. A significant variation in the emission intensity of the radicals was measured with a change in the biasing voltage. The correlation between the spectra of some species and the quality of diamond films was studied. The results show that CH and C2 both were important precursor in the diamond deposition, while C2 was associated with the presence of amorphous phase in the films during positive dc biasing process.
Journal: Thin Solid Films - Volume 516, Issue 15, 2 June 2008, Pages 4765–4770