کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1673616 | 1518085 | 2007 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Investigation of the low dielectric siloxane-based hydrogen silsesquioxane (HSQ) as passivation layer on TFT-LCD
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Spin-on low-k passivation is achieved on inverted-staggered back-channel-etched hydrogenated amorphous silicon thin-film transistors (TFT). The low-k passivation material, siloxane-based hydrogen silsesquioxane (HSQ), has been investigated for different process temperatures. Performance is improved with decreased temperature. At 300 °C, the TFT performance of HSQ passivation is superior to those of other TFTs. The hydrogen bonds of HSQ assist hydrogen incorporation to eliminate the density of states between the back channel and the passivation layer. The characteristics of HSQ passivated TFT have been studied in this work.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 516, Issues 2–4, 3 December 2007, Pages 374–377
Journal: Thin Solid Films - Volume 516, Issues 2–4, 3 December 2007, Pages 374–377
نویسندگان
Ta-Shan Chang, Ting-Chang Chang, Po-Tsun Liu, Shu-Wei Tsao, Feng-Sheng Yeh,