Ion beam modification of TiO2 films prepared by Cat-CVD for solar cell

The effects of nitrogen ion bombardment on TiO2 films prepared by the Cat-CVD method have been studied to improve the optical and electrical properties of the material for use in Si thin film solar cells. The refractive index n and the dark conductivity of the TiO2 film increased with irradiation time. The refractive index n of the TiO2 film was changed from 2.1 to 2.4 and the electrical conductivity was improved from 3.4 × 10− 2 to 1.2 × 10− 1 S/cm by the irradiation. These results are due to the formation of Ti–N bonds and oxygen vacancies in the film.