کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1674188 | 1008959 | 2009 | 7 صفحه PDF | دانلود رایگان |
Sputtered InxSy layers deposited on borosilicate glass and Si at substrate temperatures ranging from about 60 °C to 340 °C were analyzed by means of X-ray diffraction, energy-dispersive X-ray spectrometry, and optical transmission and reflection measurements. With increasing substrate temperature, the InxSy layers exhibit increasing sulfur concentration and also increasing absorption-edge energies. InxSy layers on Cu(In,Ga)Se2(CIGS)/Mo/glass stacks were additionally studied by scanning and transmission electron microscopy. With increasing substrate temperature, Cu, Ga, and In interdiffusion between CIGS and InxSy becomes more enhanced. At 340 °C, CuIn5S8 forms instead of InxSy. The CuIn5S8 formation at elevated temperatures may be the reason for the very low efficiency of solar cells with indium sulfide buffers deposited at temperatures above about 250 °C by various techniques.
Journal: Thin Solid Films - Volume 517, Issue 8, 27 February 2009, Pages 2792–2798