کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1674320 1008961 2008 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Photopatterning of heterostructured polymer Langmuir–Blodgett films
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Photopatterning of heterostructured polymer Langmuir–Blodgett films
چکیده انگلیسی

Heterostructured polymer Langmuir–Blodgett (LB) film prepared by using poly(N-dodecylacrylamide-co-t-butyl 4-vinylphenyl carbonate) (p(DDA-tBVPC53)) and poly(N-neopentyl methacrylamide-co-9-anthrylmethyl methacrylate) (p(nPMA-AMMA10)) polymer LB films which can act as photogenerator layers were investigated. Patterns with a resolution of 0.75 μm were obtained on heterostructured polymer LB films composed of 4 layers of p(nPMA-AMMA10) LB film (top layers) and 40 layers of p(DDA-tBVPC53) LB film (under layers) on a silicon wafer by deep UV irradiation followed by development with 1% tetramethylammonium hydroxide aqueous solution. The sensitivity of the heterostructured polymer LB films was improved without loss of the resolution compared with p(DDA-tBVPC53) LB film. The etch resistance of the heterostructured polymer LB films was sufficiently good to allow patterning of a copper film suitable for photomask fabrication.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 516, Issue 8, 29 February 2008, Pages 2115–2119
نویسندگان
, , ,