کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1674460 | 1008964 | 2008 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Analysis of electronic transport properties of thin film CuIn(S,Se)2 solar cells based on electrodeposition
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Electrodeposited CuIn(S,Se)2 based solar cells with efficiencies of 10.4% and 7.1% are reported. Their electronic transport properties are examined as a function of temperature by admittance spectroscopy and dark-current–voltage measurements (J (V, T)). For all devices, admittance spectroscopy reveals two relative shallow defect levels located at 0.1 eV and 0.23 eV, respectively. For the device showing the lowest efficiency, an additional deep defect at 0.51 eV is probed. The presence of this defect is well correlated with the J (V, T) results which reveal an enhancement of a second recombination mechanism that we identify as an additional tunneling-assisted recombination path.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 516, Issue 20, 30 August 2008, Pages 6999–7003
Journal: Thin Solid Films - Volume 516, Issue 20, 30 August 2008, Pages 6999–7003
نویسندگان
A. Darga, D. Mencaraglia, Z. Djebbour, A. Migan Dubois, V. Bermúdez, J.P. Connolly, C.M. Ruiz, J.-F. Guillemolles,