کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1674468 1008964 2008 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Effects of annealing under various atmospheres on electrical properties of Cu(In,Ga)Se2 films and CdS/Cu(In,Ga)Se2 heterostructures
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Effects of annealing under various atmospheres on electrical properties of Cu(In,Ga)Se2 films and CdS/Cu(In,Ga)Se2 heterostructures
چکیده انگلیسی
The effects of annealing under various atmospheres on the electrical properties of Cu(In,Ga)Se2 (CIGS) films and CdS/CIGS heterostructures were investigated. For CIGS films without CdS, the electrical properties of CIGS degraded under vacuum and O2 annealing, although such degradations were not observed under N2 annealing. For the CdS/CIGS heterostructures, the electrical properties of the junctions improved after annealing under all gas ambients. Therefore, CdS films prevent the chemical reactions at the CIGS surfaces and are necessary for effectively annealing the CIGS film. We observed a distinct correlation between the degradation of the electrical properties and increase in the defect density. Finally, we discussed the origin of the defect states.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 516, Issue 20, 30 August 2008, Pages 7036-7040
نویسندگان
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