Recrystallization of CdTe film under conditions of high temperature and mechanical pressure

A new method, experimental device and technology for large-grained CdTe film preparation are described. This method enabled to produce CdTe films with the thickness of 1-2 µm and more. Films were recrystallized on the top of 100 µm thick Mo plate and Mo/glass substrate. Phase composition of the CdTe film remained stable up to 800 °C of heating plate temperature. Due to the temperature gradient on the recrystallization area, the CdTe film stuck on the upper, low-temperature (400 °C) surface of the substrate, and an ohmic linear contact between the Mo and CdTe was achieved. Independently, face centered cubic form and large-grained CdTe film with preferable orientation (111) was formed.