کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
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1674891 | 1518118 | 2005 | 4 صفحه PDF | دانلود رایگان |

We have attempted the preparation and characterization of Sn2S3 thin films by using the spray pyrolysis technique. We started with acidic aqueous solutions including tin (II) chloride and thiourea, which were atomized with compressed air as carrier gas. The Sn2S3 thin films were obtained on glass substrates. Thin layers of Sn–S have been grown at various temperatures in the range of 275–325 °C and various [S/Sn] ratios. The structural properties have been determined by using X-ray diffraction (XRD). The changes observed in the structural phases during the film formation in dependence of growth temperatures are reported and discussed. The optical constants of the deposited films were obtained using the experimentally recorded transmission and reflectance spectral data as functions of the wavelength, in the range of 300–1800 nm. An analysis of the deduced spectral absorption of the deposited films revealed an optical indirect band gap energy of 1.9–2.2 eV for Sn2S3 layers.
Journal: Thin Solid Films - Volumes 480–481, 1 June 2005, Pages 439–442