Enhanced morphological stability of NiGe films formed using Ni(Zr) alloy

A process to stabilise the formation of NiGe using Zr alloying engineering approach was investigated. The NiGe film maintained continuity up to 600 °C with NiGe phase stable up to 700 °C. Secondary ion mass spectroscopy and transmission electron microscopy characterisations showed that a thin ZrOx layer was formed on top of NiGe. The ZrOx layer acted as a capping layer to NiGe. As a result, the morphology and phase formation of NiGe were stabilised. We propose Ni(Zr) alloy as a promising material for germanides metallisation contacts in metal-oxide-semiconductor field-effect transistors (MOSFETs).