کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1675363 | 1518096 | 2006 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Dielectric barriers, pore sealing, and metallization
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
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چکیده انگلیسی
Future high performance on-chip interconnect requires ultra-low K materials with an effective dielectric constant less than 2.0. Ultra-low K materials normally contain a certain degree of porosity. One of the key issues in the integration of porous materials is the inability of these materials to prevent gaseous penetration during the metallization process such as chemical vapor deposition (CVD) or atomic layer deposition (ALD). In this paper we describe a novel idea to seal the porous ultra-low K film using a thin Parylene layer deposited by a chemical vapor deposition technique. Interaction of metal barrier such as Ta and Ru with Parylene are explored. We found that Ta films deposited on Parylene surface exhibit the desirable alpha phase which has a bcc structure. We also found that Ta does not diffuse into Parylene films under a bias temperature stress of 0.5 MV/cm at 150 °C, but Ru does.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 504, Issues 1â2, 10 May 2006, Pages 239-242
Journal: Thin Solid Films - Volume 504, Issues 1â2, 10 May 2006, Pages 239-242
نویسندگان
Jasbir S. Juneja, Pei-I Wang, Tansel Karabacak, T.-M. Lu,