Chemical mechanical polishing characteristics in (Bi,La)Ti3O12 damascene process for high-density ferroelectric memories

Ferroelectric thin films such as Pb(Zr,Ti)O3, SrBi2Ta2O9, and Bi3.25La0.75Ti3O12 (BLT) thin films have been widely investigated for non-volatile ferroelectric memories. BLT thin films show advantages such as highly fatigue resistance, low processing temperature, and large remanent polarization. The patterning of these ferroelectric thin films with a vertical sidewall and without plasma damage is strongly required. Chemical mechanical polishing (CMP) process was investigated for the vertical sidewall patterning of BLT thin films. Removal rate and within-wafer non-uniformity (WIWNU%) were examined by change of process parameters. Potential of hydrogen (pH) in slurry was varied for an improvement of the removal rate and WIWNU%. Surface roughness of BLT thin films after CMP process for the improvement of densification was inquired into by atomic force microscopy. The excellent performance such as 188.4 nm/min of removal rate, 2.61% of WIWNU%, 0.95 nm of root mean square roughness, and 6.94 nm of peak-to-valley roughness was obtained. This result will lead the CMP process to pattern the BLT thin films for the vertical sidewall without plasma damage.