کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1675555 | 1008980 | 2007 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
X-ray photoelectron spectroscopy study of the initial growth of transition metal nanoscale films on (100) Si substrates
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: X-ray photoelectron spectroscopy study of the initial growth of transition metal nanoscale films on (100) Si substrates X-ray photoelectron spectroscopy study of the initial growth of transition metal nanoscale films on (100) Si substrates](/preview/png/1675555.png)
چکیده انگلیسی
The initial growth stages of materials non-active to a substrate has been extensively studied for decades, whereas there had been fewer studies on the initial growth of active metals on silicon substrate, despite its technological importance. In this paper the very early growth stages of transition metal (Ti, V and Nb) films deposited by rf sputtering on unheated (100) Si substrate were studied by in situ X-ray photoelectron spectroscopy. The following sequence of the phase composition and the growth mechanism changes during deposition process was revealed. Initially in a submonolayer regime, small 3D TiO2 islands are formed via reduction of a native silicon oxide layer on a substrate followed by formation of a TiO phase between TiO2 islands and on their top. After deposition of ca. 2 monolayers a metallic Ti phase appears and later only the metal Ti film grows. The same growth behavior takes place at Nb and V deposition with a difference that in the case of Nb the above changes occur at earlier stages what can be explained by the highest niobium activity to the reduction of silicon oxide in the row V, Nb, Ti.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 515, Issue 16, 4 June 2007, Pages 6586-6589
Journal: Thin Solid Films - Volume 515, Issue 16, 4 June 2007, Pages 6586-6589
نویسندگان
Vladimir I. Trofimov, Natalya M. Sushkova, Jong-Il Kim,