کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1676330 | 1008995 | 2007 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
The structures of low dielectric constant SiOC thin films prepared by direct and remote plasma enhanced chemical vapor deposition
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Two structures of low dielectric constant (low-k) SiOC films were elucidated in this work. Low-k thin film by remote plasma mode was mainly composed of inorganic Si–O–Si backbone bonds and some oxygen atoms are partially substituted by CH3, which lowers k value. The host matrix of low-k thin films deposited by direct plasma mode, however, was mainly composed of organic C–C bonds and “M” and “D” moieties of organosilicate building blocks, and thus the low dipole and ionic polarizabilities were the important factors on lowering k value.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 515, Issue 12, 23 April 2007, Pages 5035–5039
Journal: Thin Solid Films - Volume 515, Issue 12, 23 April 2007, Pages 5035–5039
نویسندگان
Jaeyeong Heo, Hyeong Joon Kim, JeongHoon Han, Jong-Won Shon,