کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1676863 | 1518093 | 2006 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Dislocation distribution in a strain-relaxed SiGe thin film grown on an ion-implanted Si substrate
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We produced a strain-relaxed SiGe thin film on a Si substrate using the method we proposed recently: we implanted Ar ions into Si substrates and then grew 100-nm-thick Si0.8Ge0.2 at 500 °C by the solid source molecular beam epitaxy method followed by an annealing at 900 °C for 2 h. Then we observed the distribution of dislocations both in the SiGe and Si from three different crystallographic directions by transmission electron microscopy. There are threading dislocations in the SiGe layer. However, it was also revealed that a large number of dislocations were localized around the SiGe/Si interface and it can be concluded that the dislocations around the interface mainly contribute to relax the SiGe.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 508, Issues 1–2, 5 June 2006, Pages 103–106
Journal: Thin Solid Films - Volume 508, Issues 1–2, 5 June 2006, Pages 103–106
نویسندگان
Junji Yamanaka, Kentaro Sawano, Kumiko Suzuki, Kiyokazu Nakagawa, Yusuke Ozawa, Takeo Hattori, Yasuhiro Shiraki,