Reaction of Si with excited nitrogen species in pure nitrogen plasma near atmospheric pressure

Stable discharging of pure nitrogen can be maintained even at atmospheric pressure when alternative pulsed voltage is applied between two parallel plate electrodes. From optical emission spectroscopy, strong emissions from the N2 2nd positive system and weak emissions from N2 Herman's infrared system are observed. Using this atmospheric pressure plasma, 1.6-nm-thick silicon nitride film was obtained at the substrate temperature as low as 25 °C, and the thickness was independent of the substrate temperature. The excited species attributed to the N2 2nd positive system responsible for this high reactivity during the nitridation process using the nitrogen plasma generated near atmospheric pressure.