کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1677132 1518102 2006 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Band gap blue shift of InGaAs/InP multiple quantum wells by different dielectric film coating and annealing
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Band gap blue shift of InGaAs/InP multiple quantum wells by different dielectric film coating and annealing
چکیده انگلیسی

Band gap blue shift of InGaAs/InP multiple quantum well (MQW) structures by impurity-free vacancy disordering (IFVD) is studied by photoluminescence (PL) and secondary ion mass spectrum (SIMS). SiO2, Si3N4, and spin on glass (SOG) were used for the dielectric layers to create the vacancies. The results indicate that the band gap blue shift varies with the different dielectric layers and depends on the annealing temperature. The blue shift is also related to the combination of the layers between dielectric and cladding layers. The SIMS profile shows that the dielectric capped layer and rapid thermal annealing caused the quantum well intermixing, which results in the band gap blue shift. Optimum condition can be reached by choosing suitable dielectric layer and annealing condition.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 498, Issues 1–2, 1 March 2006, Pages 179–182
نویسندگان
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