Precise structure control of GaAs/InGaP hetero-interfaces using metal organic vapor phase epitaxy and its abruptness analyzed by STEM

► We fabricated abrupt InGaP/GaAs and GaAs/InGaP hetero-interfaces using MOVPE. ► Improvement of hetero-interface was realized by optimized gas-switching sequence. ► Abruptnesses of hetero-interfaces were quantitatively evaluated by STEM.