کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8032543 | 1517952 | 2018 | 40 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Comparison of various low dielectric constant materials
ترجمه فارسی عنوان
مقایسه مقادیر مختلف مواد پایدار دی الکتریک
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کلمات کلیدی
Time-dependent-dielectric-breakdownDielectric constant - ثابت دی الکتریکBreakdown - درهم شکستنLow-k dielectrics - دی الکتریک کم kOrganosilicate glass - شیشه های آلومینیومReliability - قابلیت اطمینانplasma-enhanced chemical vapor deposition - مخلوط بخار شیمیایی با افزایش پلاسماPorosity - پوکی استخوان
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
چکیده انگلیسی
To reduce the intrinsic resistance-capacitance delay of back-end-of-line (BEOL) interconnects in integrated circuits, low-dielectric-constant (low-k) materials with a dielectric constant (k) <4.0 have been introduced to be used as an interconnecting insulator from 130â¯nm technological node. In this paper, the physical and electrical characteristics, as well as the reliability, of various commercial low-k dielectric films with k values from 2.50 to 3.60, deposited by plasma-enhanced chemical vapor deposition were investigated. In addition to fluorinated silicate glass and dense organosilicate glass (OSG) low-k dielectric films, two porous OSG (P-OSG) films deposited using different sacrificial organic porogen precursors (alpha-terpinene (ATRP) and cyclooctane (C8H16)) were compared. The P-OSG films provide a lower k value than other low-k dielectric films, however, their resistance to the integration process is relatively low, resulting in a large increase in the k value and degraded electrical performance and reliability. Accordingly, the pursuit of the highly porous low-k dielectric films with a further low k value for the advanced technology nodes remains arguable. If a highly porous low-k dielectric film must be adopted in BEOL interconnects, the use of a sacrificial porogen precursor must be carefully considered because it would affect the properties of the resulting P-OSG films. In this study, the P-OSG film for the ATRP precursor exhibited better mechanical, electrical, and reliability characteristics than that for the C8H16 precursor.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 660, 30 August 2018, Pages 871-878
Journal: Thin Solid Films - Volume 660, 30 August 2018, Pages 871-878
نویسندگان
Yi-Lung Cheng, Chih-Yen Lee, Wei-Jie Hung, Giin-Shan Chen, Jau-Shiung Fang,