کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8032574 | 1517952 | 2018 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Plasma-enhanced atomic layer deposition of low temperature silicon dioxide films using di-isopropylaminosilane as a precursor
ترجمه فارسی عنوان
رسوب لایه اتمی لایه اتمی از سیلیکون های سیلیکونی با درجه حرارت پایین با استفاده از دی ایزوپروپیل آمینوسیلان به عنوان پیش ساز
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
چکیده انگلیسی
Silicon dioxide (SiO2) films were deposited on Si (100) substrates with plasma-enhanced atomic layer deposition (PE-ALD) technique at 50, 100, and 200â¯Â°C, using di-isopropylaminosilane as a silicon source and oxygen (O2) plasma as an oxident. Self-limiting growth was confirmed with saturated growth-per-cycle (GPC) of ~1.7â¯Ã
at a constant O2 plasma time of 1.0â¯s while the GPC of the PE-ALD SiO2 film decreased with the O2 plasma time at a low temperature of 50â¯Â°C. In our experiment, the highest GPC of ~2.0â¯Ã
was achieved when the O2 plasma time was 0.3â¯s. Along the change of deposition temperature, an activation energy for thermal dehydroxylation was estimated from the gradient of the Arrhenius plot. Also, film properties were investigated with varying O2 plasma time. PE-ALD SiO2 film exhibited a disparity in wet etch rate and stoichiometric composition dependent on the in-cycle O2 plasma time. According to our experimental results, PE-ALD SiO2 film at a low temperature of 50â¯Â°C, presented high GPC and refractive index value of typical SiO2 film compared to thermal ALD SiO2.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 660, 30 August 2018, Pages 572-577
Journal: Thin Solid Films - Volume 660, 30 August 2018, Pages 572-577
نویسندگان
Donghyuk Shin, Heungseop Song, Minhyeong Lee, Heungsoo Park, Dae-Hong Ko,