کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8033351 | 1517971 | 2017 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Junction temperature rise due to self-heating effects in GaInN blue light-emitting diodes
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Junction temperature rise due to self-heating effects in GaInN blue light-emitting diodes Junction temperature rise due to self-heating effects in GaInN blue light-emitting diodes](/preview/png/8033351.png)
چکیده انگلیسی
Originating from a non-radiative recombination in the active region of a light-emitting diode (LED), the self-heating effect was investigated under continuous wave (cw) operation with a GaInN blue LED. Current-voltage (I-V) characteristics under pulse operation that lacked self-heating were measured and compared with the corresponding I-V measurement under the cw operation. Accordingly, a comparison of the measured I-V curves enabled estimation of the junction temperature of the LED during the cw operation. The junction temperature of the device increased as high as 323Â K at an input current of 480Â mA. The operating current showed a weaker temperature dependence in accordance with the bias increase, which is explained by the expansion of the Shockley diode equation.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 641, 1 November 2017, Pages 8-11
Journal: Thin Solid Films - Volume 641, 1 November 2017, Pages 8-11
نویسندگان
Se Joon Oh, Jaehee Cho,