کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
8033373 1517971 2017 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Low temperature rapid formation of Au-induced crystalline Ge films using sputtering deposition
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Low temperature rapid formation of Au-induced crystalline Ge films using sputtering deposition
چکیده انگلیسی
We report low temperature (100-170 °C) and rapid (10 min) formation of crystalline Ge films between Au catalyst film and quartz glass substrate using a radio frequency magnetron sputtering deposition. The formation rate of crystalline Ge films between Au catalyst film and quartz glass substrate is proportional to the deposition rate of Ge film, namely the flux of Ge atoms. To obtain insights on the formation mechanism of crystalline Ge films, we studied dependence of grain size of Au films on annealing temperature and Au film thickness. Crystalline Ge films formed below Au films have random crystalline orientation with in-plane grain size from below 1 μm. Small crystalline grain size of Au films is needed to form rapidly Au induced crystalline Ge films.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 641, 1 November 2017, Pages 59-64
نویسندگان
, , , , , , , ,