Ion-induced secondary electron emission, optical and hydration resistant behavior of MgO, Mg-Mo-O and Mg-Ce-O thin films

Optical transmittance, hydration resistance and secondary electron emission characteristics of e-beam evaporated pure and Mo- or Ce-containing MgO thin films have been investigated. While the increased grain size and pyramidal columnar morphology following incorporation of molybdenum and cerium in MgO are responsible for the excellent discharge characteristics, emergence of neutral {100} and {110} MgO surfaces preferentially give rise to high optical transmittance (~ 92-100%) and stability against hydration. Further, addition of Mo (or Ce) in MgO causes significant increase in defect density which, in turn, enhances the photoluminescence (PL) emission from 5-, 4- and 3-coordination sites. The changes lead to lowering of the breakdown voltage and hence improvement in the secondary electron emission (SEE) efficiency. These facts have been supported by ion-induced SEE yield (γ) deduced from the a.c. breakdown voltage observed, taking neon as a discharge gas, and determined semi-empirically as well with Hagstrum's theory based on Auger neutralization process using (i) band offset parameters and surface band gap data derived from X-ray photoelectron spectroscopy signal and (ii) information of defect energy levels obtained from photoluminescence (PL) measurements. The experimental values of neon ion-induced SEE yield (γ) are found to be 0.35, 0.42 and 0.39 for MgO, Mg-Mo-O (x = 0.035) and Mg-Ce-O (x = 0.01) thin films, respectively.