کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
8035796 1518058 2013 9 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Atomic layer deposition of dielectrics for carbon-based electronics
ترجمه فارسی عنوان
انباشت لایه اتمی دی الکتریک برای الکترونیک مبتنی بر کربن
کلمات کلیدی
الکترونیک کربن، نانولوله های کربنی، گرافن، دی الکتریک رسوب لایه اتمی، کاربردی غیرقابل انعطاف
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
چکیده انگلیسی
Carbon based nanomaterials like nanotubes and graphene have emerged as future generation electronic materials for device applications because of their interesting properties such as high-mobility and ability to carry high-current densities compared to conventional semiconductor materials like silicon. Therefore, there is a need to develop techniques to integrate robust gate dielectrics with high-quality interfaces for these materials in order to attain maximum performance. To date, a variety of methods including physical vapor deposition, atomic layer deposition (ALD), physical assembly among others have been employed in order to integrate dielectrics for carbon nanotube and graphene based field-effect transistors. Owing to the difficulty in wetting pristine surfaces of nanotubes and graphene, most of the ALD methods require a seeding technique involving non-covalent functionalization of their surfaces in order to nucleate dielectric growth while maintaining their intrinsic properties. A comprehensive review regarding the various dielectric integration schemes for emerging devices and their limitations with respect to ALD based methods along with a future outlook is provided.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 546, 1 November 2013, Pages 85-93
نویسندگان
, ,