کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8036575 | 1518068 | 2013 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Tin doped β-In2S3 thin films prepared by spray pyrolysis: Correlation between structural, electrical, optical, thermoelectric and photoconductive properties
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
In this research, Sn-doped In2S3 thin films were prepared on glass substrates by spray pyrolysis technique. The effect of tin impurity on the structural, morphological, electrical, thermo-electrical, optical and photoconductive properties of films has been investigated. The tin to indium atomic ratios (x = [Sn]/[In]) were varied from 0 to 0.15 in the spray solution. X-ray diffraction analysis showed the formation of cubic β-In2S3 phase in all deposited films. Scanning electron microscopy images indicated that nanostructure of the condensed films has a particle-cluster to rock-plate growth type. The Hall effect measurements have shown n-type conductivity in all deposited films. The lowest resistance of 1.3 MΩ/â¡ and the highest the carrier concentration of 3.93 Ã 1018 cmâ 3 were obtained for the film deposited with x = 0.08. The maximum of the Seebeck coefficient equal to 132 μVKâ 1 was obtained at 400 K for the film deposited with x = 0.15. The average transmittance of films varied over the range of 40-60%. The band gap values of samples were obtained in the range of 2.89-3.75 eV for direct and 2.61-3.37 eV for indirect allowed transitions. From the photoconductivity studies, the sample prepared with x = 0.05 exhibited the highest photoconductivity among the In2S3:Sn films.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 536, 1 June 2013, Pages 57-62
Journal: Thin Solid Films - Volume 536, 1 June 2013, Pages 57-62
نویسندگان
M. Hasan Zadeh Maha, M.-M. Bagheri-Mohagheghi, H. Azimi-Juybari,