Thermal oxidation and encapsulation of silicon-carbon nanolayers

► Annealing Si-C nanolayers in quartz furnaces in N2 produces 5-14 nm thermal SiO2. ► Annealing Si-C films under Ar using graphitic carriers produces 1-2 nm SiOxCy. ► Capping the Si-C film with a-Si:H prevents oxidation of the Si-C film. ► After annealing, the a-Si:H is removed with the Si-C film fully intact.