Electrical property relaxation characteristics of UV-treated ZnO-based thin film transistors

► We report property variation of UV-treated ZnO-based thin film transistors. ► Near UV-treatment results in reversible and fast electrical property variation. ► Near UV-treatment does not induce spectroscopic changes in both ZnO and SiNx. ► Deep UV-treatment results in irreversible and slow property variation. ► Deep UV-treatment induces spectroscopic changes in both ZnO and SiNx.