کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9812306 | 1518111 | 2005 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Surfactant and impurity properties of antimony on GaAs and GaAs1âxNx on GaAs [100] by solid source molecular beam epitaxy
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Low temperature (4.5 K) photoluminescence measurements and two-dimensional [115] high resolution X-ray diffractometry rocking curves of antimony doped III-V-N on GaAs grown by solid source molecular beam epitaxy, show a possible non-radiative recombination defect known as the SbGa heteroantisite and another Sb-related defect peak at 1017 nm (â¼1.22 eV). The elimination of these defects can be a measure of the improvement in crystal quality of GaAsN:Sb. We find that Sb behaves as an impurity and competes with N for As sites until the surfactant effect commences at 1.733 Ã 10â 6 Pa. The Sb latency effect which results in a graded Sb composition at the interface was found by secondary ion mass spectroscopy measurements.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 488, Issues 1â2, 22 September 2005, Pages 56-61
Journal: Thin Solid Films - Volume 488, Issues 1â2, 22 September 2005, Pages 56-61
نویسندگان
W.K. Cheah, W.J. Fan, S.F. Yoon, K.H. Tan, R. Liu, A.T.S. Wee,