کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9812591 | 1518116 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Microscopic investigations of aluminum nitride thin films grown by low-temperature reactive sputtering
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Microscopic investigations of aluminum nitride thin films grown by low-temperature reactive sputtering Microscopic investigations of aluminum nitride thin films grown by low-temperature reactive sputtering](/preview/png/9812591.png)
چکیده انگلیسی
Aluminum nitride (AlN) films were grown on sapphire substrates by radio frequency magnetron sputtering in plasma containing a mixture of argon and nitrogen, using a pure aluminum target. Surface morphology dependence of the AlN films on growth conditions such as substrate temperature and nitrogen concentration was investigated. c-axis preferred wurtzite AlN film with surface roughness as small as 2.9 nm was obtained at substrate temperature of 100 °C and nitrogen concentration of 20%. The surface roughness of the AlN films increased with increasing substrate temperature and nitrogen concentration. The correlation between the growth conditions and the film morphology was discussed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 483, Issues 1â2, 1 July 2005, Pages 16-20
Journal: Thin Solid Films - Volume 483, Issues 1â2, 1 July 2005, Pages 16-20
نویسندگان
Q.X. Guo, M. Yoshitugu, T. Tanaka, M. Nishio, H. Ogawa,