کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9812961 | 1518123 | 2005 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Deposition of c-BN on silicon substrates coated with diamond thin films
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
By controlling the pretreatment processes and deposition parameters on silicon substrates, diamond thin films with different surface roughness and sp2/sp3 ratio were used as an interlayer for subsequent c-BN (cubic boron nitride) thin film deposition studies. The diamond interlayers were prepared by microwave plasma chemical vapor deposition (CVD), while the c-BN top layers were prepared by unbalanced magnetron sputtering physical vapor deposition. The substrate curvature changes before and after the c-BN deposition were measured to better understand the relationship between film stress and adhesion to the diamond. In the range of our experimental parameters, results showed that a rougher surface and higher ratio of sp2/sp3 in the diamond layer improves the adhesive strength of the c-BN layer. An optimized layer structure of Si/diamond/BN is established. Grading of the diamond layer is expected to be helpful for adhesion enhancement of c-BN thin films on diamond interlayers.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 474, Issues 1â2, 1 March 2005, Pages 96-102
Journal: Thin Solid Films - Volume 474, Issues 1â2, 1 March 2005, Pages 96-102
نویسندگان
Qi He, Chengming Li, Craig Frankel, Lawrence Pilione, Bill Drawl, Fanxiu Lu, Russell Messier,