Comparison on the effects of defects at Si(111) and Si(100) surface on electrical characteristics of MOS devices with HfOxNy gate dielectric Fulltext Access 4 Pages 2005
Work function controllability of metal gates made by interdiffusing metal stacks with low and high work functions Fulltext Access 4 Pages 2005
Metal gate work function extraction using Fowler-Nordheim tunneling techniques Fulltext Access 4 Pages 2005
A nanoscale approach to the electrical properties of MOS memory devices with Si-nanocrystals Fulltext Access 4 Pages 2005
Al2O3 with Metal-Nitride nanocrystals as a charge trapping layer of MONOS-type nonvolatile memory devices Fulltext Access 4 Pages 2005
Reproducible resistance switching characteristics of pulsed laserdeposited polycrystalline Nb2O5 Fulltext Access 4 Pages 2005
Coupling effect between the front and back interfaces in thin SOI MOSFETs Fulltext Access 4 Pages 2005
Impact of high-k gate stack material with metal gates on LF noise in n- and p-MOSFETs Fulltext Access 4 Pages 2005
Oxygen vacancies in amorphous silica: structure and distribution of properties Fulltext Access 4 Pages 2005
Effects of low temperature annealing on the ultrathin La2O3 gate dielectric; comparison of post deposition annealing and post metallization annealing Fulltext Access 4 Pages 2005
Performance improvement of n-MOSFETs with constituent gradient HfO2/SiO2 interface Fulltext Access 4 Pages 2005
PVD-HfSiON gate dielectrics with Ni-FUSI electrode for 65nm LSTP application Fulltext Access 4 Pages 2005
Understanding oxide degradation mechanisms in ultra-thin SiO2 through high-speed, high-resolution in-situ measurements Fulltext Access 4 Pages 2005
Impact of Fowler-Nordheim and channel hot carrier stresses on MOSFETs with 2.2nm gate oxide Fulltext Access 4 Pages 2005
Dielectric breakdown in SiO2 via electric field induced attached hydrogen defects Fulltext Access 4 Pages 2005
Study of breakdown in ultrathin gate dielectrics using constant voltage stress and successive constant voltage stress Fulltext Access 4 Pages 2005
Accurate assessment of the time-to-failure of hyper-thin gate oxides subjected to constant electrical stress using a logistic-type model Fulltext Access 4 Pages 2005
Deposition of 60 nm thin Sr0.8Bi2.2Ta2O9 layers for application in scaled 1T1C and 1T FeRAM devices Fulltext Access 4 Pages 2005
The Schur stability via the Hurwitz stability analysis using a biquadratic transformation Fulltext Access 4 Pages 2005
Generalized discrete-time PI control of output PDFs using square root B-spline expansion Fulltext Access 4 Pages 2005
A note on the robustness of high-gain-observer-based controllers to unmodeled actuator and sensor dynamics Fulltext Access 4 Pages 2005
Chaos in Circuits and Systems, G. Chen, T. Ueta, World Scientific Publishing Co., Singapore, 2002, ISBN 981-02-4933-00, $118, £87. Fulltext Access 4 Pages 2005
Uncertainty and Feedback-Hâ Loop-shaping and the ν-Gap Metric, Glenn Vinnicombe, Imperial College Press, London, 2001, ISBN: 1-86094-163-X, 316pp., US$ Fulltext Access 4 Pages 2005
Extensions to “virtual reference feedback tuning: A direct method for the design of feedback controllers” Fulltext Access 4 Pages 2005
Chemically conformal deposition of SrTiO3 thin films by Atomic Layer Deposition using conventional metal organic precursors and remote-plasma activated H2O Fulltext Access 4 Pages 2005
On the relationship between minimum norm and linear prediction for spatial spectrum estimation Fulltext Access 4 Pages 2005
Repair and capping of porous MSQ films using chlorosilanes and supercritical CO2 Fulltext Access 4 Pages 2005
Bias-stress-induced evolution of the dielectric properties of porous-ULK/ copper advanced interconnects Fulltext Access 4 Pages 2005
New Charge Pumping model for the analysis of the spatial trap distribution in the nitride layer of SONOS devices Fulltext Access 4 Pages 2005
Device degradation model for polysilicon-oxide-nitride-oxide-silicon (SONOS) based on anode hole fluence Fulltext Access 4 Pages 2005
Low temperature crystallized Ta2O5/Nb2O5 bi-layers integrated into RIR capacitor for 60 nm generation and beyond Fulltext Access 4 Pages 2005
The electrical properties of Metal-Ferroelectric (PbZr0.53Ti0.47O3)-Insulator-Silicon (MFIS) capacitors with different insulator materials Fulltext Access 4 Pages 2005
Use of ferroelectric gate insulator for thin film transistors with ITO channel Fulltext Access 4 Pages 2005
Fabrication and properties of under-gated triode with CNT emitter for flat lamp Fulltext Access 4 Pages 2005
Impact of post-deposition-annealing on the electrical characteristics of HfOxNy gate dielectric on Ge substrate Fulltext Access 4 Pages 2005
Optimisation of a thin epitaxial Si layer as Ge passivation layer to demonstrate deep sub-micron n- and p-FETs on Ge-On-Insulator substrates Fulltext Access 4 Pages 2005
Point defects at interfacial layers in stacks of (100)Ge with nm-thin HfO2 and GeOx(Ny) insulators probed by electron spin resonance Fulltext Access 4 Pages 2005
Influence of TiN metal gate on Si/SiO2 surface roughness in N and PMOSFETs Fulltext Access 4 Pages 2005
45nm LSTP FET with FUSI Gate on PVD-HfO2 with excellent drivability by advanced PDA treatment Fulltext Access 4 Pages 2005
Microscopic theory for the valence intersubband absorption of quantum wells Fulltext Access 4 Pages 2005
Structure and composition evolutions of Er-doped Si-rich SiO2 film under annealing Fulltext Access 4 Pages 2005
Short minority carrier response time in HfO2 /Ge metal-insulator-semiconductor capacitors Fulltext Access 4 Pages 2005
The effects on the field emission properties of silicon nanowires by different pre-treatment techniques of Ni catalysts layers Fulltext Access 4 Pages 2005
Effect of surface treatment on the electron field emission property of nano-diamond films Fulltext Access 4 Pages 2005
Sulfur doped nanocrystalline diamond films as field enhancement based thermionic emitters and their role in energy conversion Fulltext Access 4 Pages 2005
Self-aligned fabrication of single crystal diamond gated field emitter array Fulltext Access 4 Pages 2005
Fabrication of diamond MISFET with micron-sized gate length on boron-doped (111) surface Fulltext Access 4 Pages 2005
Effect of rapid sample cooling on efficiency of multiple impurity-atom doping Fulltext Access 4 Pages 2005
Development of high resolution position sensitive UV detector based on highly oriented polycrystalline diamond Fulltext Access 4 Pages 2005
Radiation tolerance of type IIa synthetic diamond detector for 14 MeV neutrons Fulltext Access 4 Pages 2005
Barrier permeation effects on the inversion layer subband structure and its applications to the electron mobility Fulltext Access 4 Pages 2005
Rare-earth scandate single- and multi-layer thin films as alternative gate oxides for microelectronic applications Fulltext Access 4 Pages 2005
Contribution of fast and slow states to Negative Bias Temperature Instabilities in HfxSi(1-x)ON/TaN based pMOSFETs Fulltext Access 4 Pages 2005
Positive Bias Temperature Instability in nMOSFETs with ultra-thin Hf-silicate gate dielectrics Fulltext Access 4 Pages 2005
Interface state generation in pFETs with ultra-thin oxide and oxynitride on (100) and (110) Si substrates Fulltext Access 4 Pages 2005
Negative bias temperature instability (NBTI) in SiO2 and SiON gate dielectrics understood through disorder-controlled kinetics Fulltext Access 4 Pages 2005
Characterization of high and low k dielectrica using low-energy Time of Flight Elastic Recoil Detection Fulltext Access 4 Pages 2005
Angle-resolved XPS study on chemical bonds in ultrathin silicon oxynitride films Fulltext Access 4 Pages 2005
Effect of the dielectric thickness and the metal deposition technique on the mobility for HfO2/TaN NMOS devices Fulltext Access 4 Pages 2005
A note to output feedback adaptive control for uncertain system with static nonlinearity Fulltext Access 4 Pages 2005
Laterally resolved electrical characterisation of high-K oxides with non-contact Atomic Force Microscopy Fulltext Access 4 Pages 2005
Analysis of defects at the interface between high-k thin films and (1Â 0Â 0) silicon Fulltext Access 4 Pages 2005
Impact of H2/N2 annealing on interface defect densities in Si(100)/SiO2/HfO2/TiN gate stacks Fulltext Access 4 Pages 2005
Impact of Al incorporation in hafnia on interface states in (100)Si/HfAlxOy Fulltext Access 4 Pages 2005
Stable electrochemically passivated Si surfaces by ultra thin benzene-type layers Fulltext Access 4 Pages 2005
Charge trapping and detrapping in HfO2 high-κ MOS capacitors using internal photoemission Fulltext Access 4 Pages 2005
Oxide traps characterization of 45 nm MOS transistors by gate current R.T.S. noise measurements Fulltext Access 4 Pages 2005
Characterization of interface state densitiesby photocurrent analysis: comparison of results for different insulator layers Fulltext Access 4 Pages 2005
Investigation of simultaneous fluorine and carbon incorporation in a silicon oxide dielectric layer grown by PECVD Fulltext Access 4 Pages 2005