
Origin of tensile strain in GaN grown on AlGaN/AlN stress mitigating layers on 100-mm Si (1 1 1) by ammonia molecular beam epitaxy
Keywords: A1. رادیو و تلویزیون; A1. Stresses; A1. Dislocations; A1. Diffusion; A3. Molecular beam epitaxy; B1. Nitrides