Keywords: A1 بسترها; A1. Crystal morphology; A1. Defects; A1. Substrates; A3. Chemical vapor deposition processes; B2. Semiconducting III-V materials;
مقالات ISI A1 بسترها (ترجمه نشده)
مقالات زیر هنوز به فارسی ترجمه نشده اند.
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Effect of substrate type on the electrical and structural properties of TiO2 thin films deposited by reactive DC sputtering
Keywords: A1 بسترها; A1. Substrates; B1. Titanium compounds; B2. Dielectric materials; B3. Solar cells;
Comparative study of ZnO thin film and nanopillar growth on YSZ(1Â 1Â 1) and sapphire (0Â 0Â 0Â 1) substrates by pulsed laser deposition
Keywords: A1 بسترها; A1. Substrates; A1. Nanostructures; A1. Morphological stability; A1. Surface structure; A3. Laser epitaxy; B1. Oxides;
Influence of HVPE substrates on homoepitaxy of GaN grown by MOCVD
Keywords: A1 بسترها; B2. Semiconducting III-V materials; A3. Metalorganic vapor phase epitaxy; A1. Characterization; A1. Substrates; B1. Nitrides;
Hotzone design and optimization for 2-in. AlN PVT growth process through global heat transfer modeling and simulations
Keywords: A1 بسترها; A1. Computer simulation; A1. Heat transfer; A1. Substrates; A2. Growth from vapor;
Investigation of dislocation migration in substrate-grade CdZnTe crystals during post-annealing
Keywords: A1 بسترها; A1. Line defects; A1. Substrates; A2. Bridgman technique; B1. Cadmium compounds; B2. Semiconducting ternary compounds;
Thick nonpolar m-plane and semipolar (101Ì
1Ì
) GaN on an ammonothermal seed by tri-halide vapor-phase epitaxy using GaCl3
Keywords: A1 بسترها; A1. Substrates; A3. Hydride vapor-phase epitaxy; B1. Nitrides; B2. Semiconducting III-V materials;
Top-seeded solution growth of SrTiO3 single crystals virtually free of mosaicity
Keywords: A1 بسترها; A1. Substrates; A2. Top seeded solution growth; A2. Seed crystals; B1. Oxides; B1. Perovskites;
An investigation of near-infrared photoluminescence from AP-MOVPE grown InSb/GaSb quantum dot structures
Keywords: A1 بسترها; A1. Defects; A1. Nucleation; A1. Substrates; A3. Metalorganic vapor phase epitaxy; A3. Quantum wells;
Crystal growth patterns in DC and pulsed plated galvanic copper films on (1Â 1Â 1), (1Â 0Â 0) and (1Â 1Â 0) copper surfaces
Keywords: A1 بسترها; A1. X-ray diffraction; A1. Crystal morphology; A1. Substrates; A2. Electrochemical growth; B1. Metals;
Selective area growth of N-polar GaN nanorods by plasma-assisted MBE on micro-cone-patterned c-sapphire substrates
Keywords: A1 بسترها; B1. Nitrides; A3. Molecular beam epitaxy; A3. Selective epitaxy; A1. Substrates; B1. Sapphire; A1. Nanostructures;
Effect of substrate on the structural and magnetic properties of DC sputtered Co2FeSi full Heusler alloy thin films
Keywords: A1 بسترها; A1. Characterization; A1. Substrates; A1. X-ray diffraction; B1. Alloys; B2. Magnetic materials;
Growth of InAs quantum dots on vicinal GaAs substrates by molecular beam epitaxy
Keywords: A1 بسترها; A1. Substrates; A3. Molecular beam epitaxy; B1. Nanomaterials; B2. Semiconducting III–V materials
Growth of free-standing bulk wurtzite AlxGa1âxN layers by molecular beam epitaxy using a highly efficient RF plasma source
Keywords: A1 بسترها; A1. Substrates; A3. Molecular beam epitaxy; B1. Nitrides; B2. Semiconducting III-V materials;
Reduced growth temperature of Bi6FeCoTi3O18 thin films by conductive bottom layers
Keywords: A1 بسترها; A1. Substrates; A1. High resolution x-ray diffraction; A3. Laser epitaxy; B1. Oxide
An ultra-thin compliant sapphire membrane for the growth of less strained, less defective GaN
Keywords: A1 بسترها; A1. Defects; A1. Substrates; A1. Single crystal growth; A2. Metalorganic chemical vapor deposition; A3. Solid phase epitaxy; A3. Semiconducting III–V materials
Growth optimization and applicability of thick on-axis SiC layers using sublimation epitaxy in vacuum
Keywords: A1 بسترها; A1. Mass transfer; A1. Substrates; A2. Single crystal growth; B2. Semiconducting materials;
Critical issues for homoepitaxial GaN growth by molecular beam epitaxy on hydride vapor-phase epitaxy-grown GaN substrates
Keywords: A1 بسترها; A1. Substrates; A1. Interfaces; A1. Line Defects; B1. Molecular beam epitaxy; B3. Nitrides;
An investigation of sol–gel spin coating growth of wurtzite GaN thin film on 6H–SiC substrate
Keywords: A1 بسترها; A1. Characterization; A1. Substrates; A1. High resolution X-ray diffraction; A2. Growth from solutions; B1. Nitrides; B2. Semiconducting gallium compounds
Molecular beam epitaxy of free-standing wurtzite AlxGa1âxN layers
Keywords: A1 بسترها; A1. Substrates; A3. Molecular beam epitaxy; B1. Nitrides; B2. Semiconducting III-V materials;
Incorporation of air-cavity into sapphire substrate and its effect on GaN growth and optical properties
Keywords: A1 بسترها; A1. Stresses; A1. Substrates; A3. Metalorganic chemical vapor deposition; A3. Solid phase epitaxy; B2. Semiconducting III-V materials; B3. Light emitting diodes;
Molecular beam epitaxial re-growth of CdTe, CdTe/CdMgTe and CdTe/CdZnTe double heterostructures on CdTe/InSb(1Â 0Â 0) substrates with As cap
Keywords: A1 بسترها; A1. Substrates; A1. Defects; A1. Desorption; A3. Molecular beam epitaxy; B2. Semiconducting II-VI materials; B3. Solar cells;
Properties of InGaN/GaN multiquantum wells grown on semipolar (20-21) substrates with different miscuts
Keywords: A1 بسترها; A1. Substrates; A1. Surface structure; A3. Metalorganic vapor phase epitaxy; B1. Nitrides; B2. Semiconducting III–V materials; B3. Light emitting diodes
Synthesis and characterization of wires-like ZnO structures grown on a graphite support by microwave irradiation
Keywords: A1 بسترها; A1. Morphological stability; A1. Recrystallization; A1. Substrates; B2. Semiconducting II–VI materials
Silicon surface preparation for III-V molecular beam epitaxy
Keywords: A1 بسترها; A1. Substrates; A3. Molecular beam epitaxy; B1. Antimonides; B2. III-V Compounds; B2. Silicon
Beware of poor-quality MgO substrates: A study of MgO substrate quality and its effect on thin film quality
Keywords: A1 بسترها; A1. Characterization; A1. Crystal morphology; A1. High resolution X-ray diffraction; A1. Substrates; A3. Solid phase epitaxy; B1. Magnesium oxide;
Doping of free-standing zinc-blende GaN layers grown by molecular beam epitaxy
Keywords: A1 بسترها; A1. Substrates; A3. Molecular beam epitaxy; B1. Nitrides; B2. Semiconducting III-V materials;
Impact of growth temperature and substrate orientation on dilute-nitride-antimonide materials grown by MOVPE for multi-junction solar cell application
Keywords: A1 بسترها; A1. Substrates; A3. Metalorganic vapor phase epitaxy; B1. Antimonides; B1. Nitrides; B2. Semiconducting III V materials; B3. Solar cells
High quality crack-free GaN film grown on si (1 1 1) substrate without AlN interlayer
Keywords: A1 بسترها; A1. Stresses; A1. Substrates; A3. Metalorganic chemical vapor deposition; B1. Gallium compounds; B1. Nitrides; B2. Semiconducting III–V materials
The influence of buffer layer coalescence on stress evolution in GaN grown on ion implanted AlN/Si(111) substrates
Keywords: A1 بسترها; A1. Organometallic vapor phase epitaxy; A1. Stresses; A1. Substrates; B1. Gallium compounds; B1. Nitrides; B2. Semiconducting III-V materials;
Hydride vapor phase epitaxy of AlN using a high temperature hot-wall reactor
Keywords: A1 بسترها; A1. High resolution X-ray diffraction; A1. Substrates; A3. Hydride vapor phase epitaxy; B1. Nitrides; B2. Semiconducting aluminum compounds;
High-temperature acidic ammonothermal method for GaN crystal growth
Keywords: A1 بسترها; A1. Substrates; A2. Growth from solutions; A3. Liquid phase epitaxy; B1. Nitrides; B2. Semiconducting gallium compounds;
Improved utilization efficiency of Ga source and flatness of GaN layer by pulsed-GaCl flow modulation on hydride vapor phase epitaxy
Keywords: A1 بسترها; A1. Substrates; A1. Crystal morphology; A2. Single crystal growth; A3. Hydride vapor phase epitaxy; B1. Nitrides; B2. Semiconducting gallium compounds;
Temperature dependent lattice constant of InSb above room temperature
Keywords: A1 بسترها; A1. Crystal structure; A1. High-resolution X-ray diffraction; A1. Substrates; B1. Antimonides; B2. Semiconducting indium compounds; B2. Semiconducting III-V materials;
Epitaxial growth of InGaAs on MgAl2O4 spinel for one-sun photovoltaics
Keywords: A1 بسترها; A1. Planar defects; A1. Substrates; A3. Molecular beam epitaxy; B2. Semiconducting III–V materials; B3. Solar cells
Ab initio-based approach to elemental nitridation process of α-Al2O3
Keywords: A1 بسترها; A1. Computer simulation; A1. Nanostructures; A1. Substrates; A1. Surface structure; B1. Nitrides; B1. Sapphire;
The effects of surface treatments of the substrates on high-quality GaN crystal growth
Keywords: A1 بسترها; A1. Defects; A1. Substrates; A1. Surface processes; A2. Growth from solution; A3. Liquid phase epitaxy; B1. Nitrides;
Epitaxy of GaN on Si(111) substrate by the hydride vapor phase epitaxy method
Keywords: A1 بسترها; A1. Substrates; A1. X-ray diffraction; A3. Hydride vapor phase epitaxy; B1. GaN;
Effect of crucible coating on the grain control of multi-crystalline silicon crystal growth
Keywords: A1 بسترها; A1. Nucleation; A1. Substrates; A2. Bridgman technique; B2. Semiconducting silicon
Metalorganic vapor phase growth of quantum well structures on thick metamorphic buffer layers grown by hydride vapor phase epitaxy
Keywords: A1 بسترها; A1. Substrates; A3. Hydride vapor phase epitaxy; A3. Metalorganic vapor phase epitaxy; A3. Superlattices; B2. Semiconducting III–V materials
Successful natural stress-induced separation of hydride vapor phase epitaxy-grown GaN layers on sapphire substrates
Keywords: A1 بسترها; A1. Substrates; A3. Hydride vapor phase epitaxy; B1. Nitrides; B2. Semiconducting gallium compounds
Structural and surface topography analysis of AlN single crystals grown on 6H–SiC substrates
Keywords: A1 بسترها; A1. Substrates; A2. Single crystal growth; B1. Nitrides; B2. Semiconducting materials
Growth of GaN boules via vertical HVPE
Keywords: A1 بسترها; A1. Substrates; A2. Single crystal growth; A3. Hydride vapor phase epitaxy; B1. GaN;
Zinc-blende and wurtzite AlxGa1âxN bulk crystals grown by molecular beam epitaxy
Keywords: A1 بسترها; A1. Substrates; A3. Molecular beam epitaxy; B1. Nitrides; B2. Semiconducting III-V materials;
Structural and chemical characteristics of atomically smooth GaN surfaces prepared by abrasive-free polishing with Pt catalyst
Keywords: A1 بسترها; A1. Defects; A1. Etching; A1. Substrates; A1. Surface structure; B2. Semiconducting III–V materials
Synthesis of vanadium dioxide thin films on conducting oxides and metal–insulator transition characteristics
Keywords: A1 بسترها; A1. Characterization; A1. Substrates; A3. Physical vapor deposition processes; B1. VO2; B2. Metal–insulator transition materials
Deposition of iron sulfide thin films by AACVD from single source precursors
Keywords: A1 بسترها; A1. Crystallites; A1. Substrates; A3. Aerosol assisted chemical vapor deposition (AACVD); B1. Cubic pyrite; B1. Hexagonal pyrrhotite; B1. tris(dialkyldithiocarbamato)iron(III);
Control of initial bow of sapphire substrates for III-nitride epitaxy by internally focused laser processing
Keywords: A1 بسترها; A1. Substrates; A3. Metalorganic chemical vapor deposition; B1. Nitrides; B1. Sapphire
Growth of high-quality InGaN/GaN LED structures on (1 1 1) Si substrates with internal quantum efficiency exceeding 50%
Keywords: A1 بسترها; A1. Substrates; A1. Defects; A3. Metal organic vapor phase epitaxy; B1. Nitrides; B2. Semiconducting gallium compounds; B3. Light emitting diodes
Nucleation and growth of Au-assisted GaAs nanowires on GaAs(1Â 1Â 1)B and Si(1Â 1Â 1) in comparison
Keywords: A1 بسترها; A1. Nanostructures; A1. Nucleation; A1. Substrates; A3. Molecular beam epitaxy; B1. Nanomaterials; B2. Semiconducting III-V materials;