High rate photoelectrochemical etching of GaN and the use of patterned substrates for HVPE regrowth
Keywords: A3 Epitaxy فاز هیدرید بخار; 81.65.Cf; 81.05.Ea; 81.15.GhA1. Etching; A3. Hydride vapor phase epitaxy; B1. Gallium compounds; B1. Nitrides