Keywords: A3 Epitaxy فاز هیدرید بخار; A1. Computer simulation; A1. Fluid flows; A3. Hydride vapor phase epitaxy; B2.Semiconducting III–V materials; B3. Solar cells
مقالات ISI A3 Epitaxy فاز هیدرید بخار (ترجمه نشده)
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Growth temperatures and the excess chlorine effect of N-Polar GaN growth via tri-halide vapor phase epitaxy
Keywords: A3 Epitaxy فاز هیدرید بخار; A1. Growth models; A1. Surface structure; A1. Mass transfer; A3. Hydride vapor phase epitaxy; B1. Nitrides; B2. Semiconducting III-V materials;
Heteroepitaxy of orientation-patterned nonlinear optical materials
Keywords: A3 Epitaxy فاز هیدرید بخار; A1. Characterization; A3. Hydride vapor phase epitaxy; B2. Semiconducting III-V materials; B2. Nonlinear optical materials;
Efficient iron doping of HVPE GaN
Keywords: A3 Epitaxy فاز هیدرید بخار; A1. Characterization; A1. Impurities; A1. X-ray diffraction; A3. Hydride vapor phase epitaxy; B1. Nitrides; B2. Semiconducting materials;
Doping in bulk HVPE-GaN grown on native seeds - highly conductive and semi-insulating crystals
Keywords: A3 Epitaxy فاز هیدرید بخار; A1. Doping; A3. Hydride vapor phase epitaxy; B1. Nitrides; B2. Semiconducting III-V materials;
Reduction of threading dislocation density for AlN epilayer via a highly compressive-stressed buffer layer
Keywords: A3 Epitaxy فاز هیدرید بخار; B1. AlN; A3. Hydride vapor phase epitaxy; A1. Dislocation; A1. Stress; A1. TEM;
Hydride CVD Hetero-epitaxy of B12P2 on 4H-SiC
Keywords: A3 Epitaxy فاز هیدرید بخار; A3. Chemical vapor deposition processes; A3. Hydride vapor phase epitaxy; B1. Borides; B2. Semiconducting boride compounds;
Defect structure of high temperature hydride vapor phase epitaxy-grown epitaxial (0Â 0Â 0Â 1) AlN/sapphire using growth mode modification process
Keywords: A3 Epitaxy فاز هیدرید بخار; A1. Defects; B1. Nitrides; A3. Hydride vapor phase epitaxy; A1. Characterization; A1. Growth models; B2. Semiconducting aluminum compounds;
Crystal growth of HVPE-GaN doped with germanium
Keywords: A3 Epitaxy فاز هیدرید بخار; A1. Doping; A3. Hydride vapor phase epitaxy; B1. Nitrides; B2. Semiconducting III-V materials; B3. Laser diodes;
Semipolar AlN and GaN on Si(100): HVPE technology and layer properties
Keywords: A3 Epitaxy فاز هیدرید بخار; B1. Silicon; B1. Silicon carbide; B2. Semiconducting III-V materials; A3. Hydride vapor phase epitaxy;
HVPE of aluminum nitride, film evaluation and multiscale modeling of the growth process
Keywords: A3 Epitaxy فاز هیدرید بخار; A1. Computer simulation; A1. Mass transfer; A1. Stresses; A3. Chemical vapor deposition; A3. Hydride Vapor Phase Epitaxy; B1. Aluminum nitride;
Growth of HVPE-GaN on native seeds - numerical simulation based on experimental results
Keywords: A3 Epitaxy فاز هیدرید بخار; A.1 Stresses; A1. Characterization; A3. Hydride vapor phase epitaxy; B1. GaN; B1. Nitrides; B2. Semiconducting III-V materials;
Influence of high-temperature processing on the surface properties of bulk AlN substrates
Keywords: A3 Epitaxy فاز هیدرید بخار; A1. Impurities; A2. Point defects; A3. Hydride vapor phase epitaxy; B1. Nitrides; B1. Quartz; B2. Semiconducting aluminum compounds
The electrical properties of bulk GaN crystals grown by HVPE
Keywords: A3 Epitaxy فاز هیدرید بخار; A2. Growth from vapor; A2. Single-crystal growth; A3. Hydride vapor phase epitaxy; B2. Semiconducting III–V materials
Growth of thick and high crystalline quality InGaN layers on GaN (0001¯) substrate using tri-halide vapor phase epitaxy
Keywords: A3 Epitaxy فاز هیدرید بخار; A3. Hydride vapor phase epitaxy; A3. Chloride vapor phase epitaxy; B1. Nitrides; B2. Semiconducting indium compounds;
Homoepitaxial growth of HVPE-GaN doped with Si
Keywords: A3 Epitaxy فاز هیدرید بخار; A1. Characterization; A3. Hydride vapor phase epitaxy; B1. GaN; B1. Nitrides; B2. Semiconducting III-V materials;
Influence of edge-grown HVPE GaN on the structural quality of c-plane oriented HVPE-GaN grown on ammonothermal GaN substrates
Keywords: A3 Epitaxy فاز هیدرید بخار; A1. Characterization; A3. Hydride vapor phase epitaxy; B1. GaN; B1. Nitrides; B2. Semiconducting III-V materials;
TEM study of defect structure of GaN epitaxial films grown on GaN/Al2O3 substrates with buried column pattern
Keywords: A3 Epitaxy فاز هیدرید بخار; A1. Defects; A3. Hydride vapor phase epitaxy; A3. Metalorganic chemical vapor deposition; B2. Semiconducting III-V materials;
HVPE-GaN growth on GaN-based Advanced Substrates by Smart Cutâ¢
Keywords: A3 Epitaxy فاز هیدرید بخار; A3. Smart Cutâ¢; A3. Hydride vapor phase epitaxy; B1. GaN; B1. Nitrides; B2. Semiconducting III-V materials; B3. Laser diodes;
CVD growth and properties of boron phosphide on 3C-SiC
Keywords: A3 Epitaxy فاز هیدرید بخار; B2. Semiconducting III-V materials; A3. Hydride vapor phase epitaxy; A1. Characterization; A1. High resolution X-ray diffraction; A1. X-ray topography; A1. Defects;
Numerical analysis on the origin of thickness unevenness and formation of pits at GaN thin film grown by HVPE
Keywords: A3 Epitaxy فاز هیدرید بخار; A1. Computer simulation; A1. Fluid flows; A3. Hydride vapor phase epitaxy; B1. GaN;
Novel approach for n-type doping of HVPE gallium nitride with germanium
Keywords: A3 Epitaxy فاز هیدرید بخار; A3. Hydride vapor phase epitaxy; A1. Doping; A2. Single Crystal Growth; B1. Gallium Compounds; B1. Nitrides; B2. Semiconducting III-V materials;
Fe-doping in hydride vapor-phase epitaxy for semi-insulating gallium nitride
Keywords: A3 Epitaxy فاز هیدرید بخار; A1. Doping; A2. Growth from vapor; A3. Hydride vapor phase epitaxy; B2. Semiconducting gallium compounds; B2. Semiconducting III-V materials;
High uniform growth of 4-inch GaN wafer via flow field optimization by HVPE
Keywords: A3 Epitaxy فاز هیدرید بخار; A3. Hydride vapor phase epitaxy; Nozzle structures; Thickness uniformity; Flow field; 4-inch GaN;
Tri-halide vapor phase epitaxy of thick GaN using gaseous GaCl3 precursor
Keywords: A3 Epitaxy فاز هیدرید بخار; A1. Crystal structure; A3. Hydride vapor phase epitaxy; B1. Nitrides; B2. Semiconducting III-V materials;
Evolution of epilayer tilt in thick InxGa1−xAs metamorphic buffer layers grown by hydride vapor phase epitaxy
Keywords: A3 Epitaxy فاز هیدرید بخار; A1. Crystal structure; A1. High resolution X-ray diffraction; A3. Hydride vapor phase epitaxy; B2. Semiconducting III–V materials; B2. Semiconducting ternary compounds
High rate InN growth by two-step precursor generation hydride vapor phase epitaxy
Keywords: A3 Epitaxy فاز هیدرید بخار; A1. Characterization; A3. Hydride vapor phase epitaxy; B1. Nitrides; B2. Semiconducting indium compounds
Ammonothermal growth of GaN crystals on HVPE-GaN seeds prepared with the use of ammonothermal substrates
Keywords: A3 Epitaxy فاز هیدرید بخار; A2. Ammonothermal; A3. Hydride vapor phase epitaxy; A3. Growth from solution; B1. Gallium nitride;
Origin of faceted surface hillocks on semi-polar (112¯2) GaN templates grown on pre-structured sapphire
Keywords: A3 Epitaxy فاز هیدرید بخار; A1. Characterization; A1. Defects; A3. Hydride vapor phase epitaxy; A3. Metalorganic vapor phase epitaxy; B1. Nitrides; B2. Semiconducting III-V materials;
Interruption-free growth of 10 μm-thick GaN film prepared on sputtered AlN/PSS template by hydride vapor phase epitaxy
Keywords: A3 Epitaxy فاز هیدرید بخار; A1. High resolution X-ray diffraction; A3. Metalorganic chemical vapor deposition; A3. Hydride vapor phase epitaxy; B1. Gallium nitride; B2. Semiconducting III-V materials; Aluminum nitride buffer layer
Microscopic crystalline structure of a thick AlN film grown on a trench-patterned AlN/α-Al2O3 template
Keywords: A3 Epitaxy فاز هیدرید بخار; A1. X-ray microdiffraction; A1. Crystal structure; A1. Domain tilting; A3. Hydride vapor phase epitaxy; B1. Nitrides; B2. Semiconducting III–V materials
Fabrication of free-standing GaN by using thermal decomposition of GaN
Keywords: A3 Epitaxy فاز هیدرید بخار; A1. Interfaces; A3. Hydride vapor phase epitaxy; B1. Gallium compounds; B1. Nitrides; B1. Sapphire
Hydride vapor phase epitaxy of high quality {101̄3̄} semipolar GaN on m-plane sapphire coated with self-assembled SiO2 nanospheres
Keywords: A3 Epitaxy فاز هیدرید بخار; A3. Hydride vapor phase epitaxy; B1. Sapphire; B1. Semipolar GaN; B2. SiO2 nanospheres
HVPE-GaN grown on MOCVD-GaN/sapphire template and ammonothermal GaN seeds: Comparison of structural, optical, and electrical properties
Keywords: A3 Epitaxy فاز هیدرید بخار; A1. Characterization; A3. Hydride vapor phase epitaxy; B1. GaN; B1. Nitrides; B2. Semiconducting III–V materials
Hydride vapor phase epitaxy of AlN using a high temperature hot-wall reactor
Keywords: A3 Epitaxy فاز هیدرید بخار; A1. High resolution X-ray diffraction; A1. Substrates; A3. Hydride vapor phase epitaxy; B1. Nitrides; B2. Semiconducting aluminum compounds;
Correlation between the residual stress and the density of threading dislocations in GaN layers grown by hydride vapor phase epitaxy
Keywords: A3 Epitaxy فاز هیدرید بخار; A1. Residual stress; A1. Threading dislocations; A3. Hydride vapor phase epitaxy; B1. Gallium nitride;
Growth of thick GaN layers on laser-processed sapphire substrate by hydride vapor phase epitaxy
Keywords: A3 Epitaxy فاز هیدرید بخار; A1. Defects; A3. Hydride vapor phase epitaxy; B1. Sapphire; B2. Semiconductor III-V materials; A1. Laser process; A1. Cracks;
Improved utilization efficiency of Ga source and flatness of GaN layer by pulsed-GaCl flow modulation on hydride vapor phase epitaxy
Keywords: A3 Epitaxy فاز هیدرید بخار; A1. Substrates; A1. Crystal morphology; A2. Single crystal growth; A3. Hydride vapor phase epitaxy; B1. Nitrides; B2. Semiconducting gallium compounds;
HVPE-GaN growth on misoriented ammonothermal GaN seeds
Keywords: A3 Epitaxy فاز هیدرید بخار; A1. Characterization; A3. Hydride vapor phase epitaxy; B1. GaN; B1. Nitrides; B2. Semiconducting III-V materials;
Record high-aspect-ratio GaAs nano-grating lines grown by Hydride Vapor Phase Epitaxy (HVPE)
Keywords: A3 Epitaxy فاز هیدرید بخار; A1. Low dimensional structures; A1. Nanostructures; A1. Growth models; A3. Hydride vapor phase epitaxy; B2. Semiconducting gallium arsenide;
Cross-sectional X-ray microdiffraction study of a thick AlN film grown on a trench-patterned AlN/α-Al2O3 template
Keywords: A3 Epitaxy فاز هیدرید بخار; A1. Domain twist; A1. Local strain; A1. X-ray microdiffraction; A3. Hydride vapor phase epitaxy; B1. Nitrides; B2. Semiconducting III-V materials;
Analysis of self-lift-off process during HVPE growth of GaN on MOCVD-GaN/sapphire substrates with photolitographically patterned Ti mask
Keywords: A3 Epitaxy فاز هیدرید بخار; A3. Hydride vapor phase epitaxy; B1. GaN;
Growth of thick GaN layer on ZnAl2O4 spinel layer by HVPE
Keywords: A3 Epitaxy فاز هیدرید بخار; A1. Spinel layer; A2. Crystal growth; A3. Hydride vapor phase epitaxy; B1. Gallium compounds; B1. Zinc compounds
Epitaxy of GaN on Si(111) substrate by the hydride vapor phase epitaxy method
Keywords: A3 Epitaxy فاز هیدرید بخار; A1. Substrates; A1. X-ray diffraction; A3. Hydride vapor phase epitaxy; B1. GaN;
Optimization of low temperature GaN buffer layers for halide vapor phase epitaxy growth of bulk GaN
Keywords: A3 Epitaxy فاز هیدرید بخار; A1. Crystal morphology; A1. Interfaces; A1. Roughening; A2. Growth from vapor; A3. Hydride vapor phase epitaxy; B1. Nitrides
Metalorganic vapor phase growth of quantum well structures on thick metamorphic buffer layers grown by hydride vapor phase epitaxy
Keywords: A3 Epitaxy فاز هیدرید بخار; A1. Substrates; A3. Hydride vapor phase epitaxy; A3. Metalorganic vapor phase epitaxy; A3. Superlattices; B2. Semiconducting III–V materials
Electrical and optical inhomogeneity in N-face GaN grown by hydride vapor phase epitaxy
Keywords: A3 Epitaxy فاز هیدرید بخار; A1. Defects; A1. Etching; A3. Hydride vapor phase epitaxy; B1. Nitrides
Growth of GaN boules via vertical HVPE
Keywords: A3 Epitaxy فاز هیدرید بخار; A1. Substrates; A2. Single crystal growth; A3. Hydride vapor phase epitaxy; B1. GaN;
Influence of source gas supply sequence on hydride vapor phase epitaxy of AlN on (0001) sapphire substrates
Keywords: A3 Epitaxy فاز هیدرید بخار; A1. Characterization; A3. Hydride vapor phase epitaxy; B1. Nitrides; B1. Sapphire; B2. Semiconducting aluminum compounds
Studies about wafer bow of freestanding GaN substrates grown by hydride vapor phase epitaxy
Keywords: A3 Epitaxy فاز هیدرید بخار; A1. Stresses; A1. Wafer bow; A3. Hydride vapor phase epitaxy; B1. Nitrides; B2. Semiconducting III–V materials