
Microscopic study of the H2O vapor treatment of the silicon grain boundaries
Keywords: عیوب; 73.50.−h; 73.40.−c; 67.80.Mg; 73.40.Cg; 73.40.Mg; 81.40.−zPolycrystalline silicon films; H2O vapor treatment; Potential; Crystalline disorder; Stress; Defects; Passivation; Micro Raman spectroscopy; Kelvin force microscopy