کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
11001688 1009310 2018 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Enhanced thermoelectric performance of Ga-doped ZnO film by controlling crystal quality for transparent thermoelectric films
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Enhanced thermoelectric performance of Ga-doped ZnO film by controlling crystal quality for transparent thermoelectric films
چکیده انگلیسی
ZnO, a wide bandgap (3.3 eV) semiconductor has been expected to be a transparent thermoelectric material for the purpose of energy harvesting application because it is a low-cost and ubiquitous element material with a high optical transmittance and a high power factor. Bulk Ga-doped ZnO (GZO) is expected to have higher electrical conductivity and lower thermal conductivity than bulk Al-doped ZnO. However, because reports on their thermoelectric properties of GZO films have been scarce up to now, it has been unclear what film characters affect the thermoelectric properties effectively. In this work, GZO thin films with different characters (c-axis orientation, crystal domains and the domain interfaces, and carrier activation rate) were fabricated by two different methods, sol-gel method and pulsed laser deposition. All samples have optical transmittance over 80% in visible range. The highly-oriented GZO films exhibit the highest power factors up to 2.8 μWcm−1 K−2 in the reported GZO materials and low thermal conductivities of 8.4 Wm−1 K−1 (1/4 as high as that of bulk GZO). This enhanced thermoelectric performance is attributed to the high carrier activation rate, and the interfaces of highly-oriented crystal domains with the small carrier scattering effect.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 666, 30 November 2018, Pages 185-190
نویسندگان
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