کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1670660 | 1008902 | 2010 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Electrical characterisation of HfYO MIM-structures deposited by ALD
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Electrical characterisation of HfYO MIM-structures deposited by ALD Electrical characterisation of HfYO MIM-structures deposited by ALD](/preview/png/1670660.png)
چکیده انگلیسی
By an ALD process with the solid precursors HfCl4 and (CpCH3)3Y and the oxidant water Yttrium doped HfO2 was deposited on TiN layer on highly doped silicon. The films were analysed by ellipsometry, XRR, RBS and XRD. For the electrical characterisation, capacitance and I–V measurement on MIM structure were used. By doping the HfO2 with 6.2 at.% Yttrium and annealing the film at 500 °C in N2 the k-value increased by 60% for a 9.5 nm thick film, the leakage current also increased. The deposited amorphous film crystallises at 450 °C into the cubic phase.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 518, Issue 16, 1 June 2010, Pages 4680–4683
Journal: Thin Solid Films - Volume 518, Issue 16, 1 June 2010, Pages 4680–4683
نویسندگان
T. Roessler, J. Gluch, M. Albert, J.W. Bartha,