کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1794062 | 1023689 | 2008 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Influence of MOVPE growth temperature on the structural and optical properties of InGaN MQW laser diodes
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کلمات کلیدی
78.55.Cr81.15.Gh42.55.Px81.07.St68.37.Ps - 68.37.P78.60.Hk - 78.60.HKA1. Characterization - A1 تعیین مشخصاتA1. Interfaces - A1 رابط هاA3. Metalorganic vapor phase epitaxy - A3 اپیتاکسی فاز بخار فلزیB1. Nitrides - B1 نیتریت هاB2. Semiconducting III–V materials - B2 مواد نیمه هادی III-VB3. Laser diodes - B3 دیودهای لیزری
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Influence of MOVPE growth temperature on the structural and optical properties of InGaN MQW laser diodes Influence of MOVPE growth temperature on the structural and optical properties of InGaN MQW laser diodes](/preview/png/1794062.png)
چکیده انگلیسی
The morphological and optical properties of InGaN multiple quantum wells (MQWs) emitting at 405 nm are studied with respect to the MQW growth temperature. The latter was varied between 760 and 840 °C in structures grown on c-plane sapphire substrates by metal-organic vapor-phase epitaxy (MOVPE). The indium content in the quantum well was kept constant for all temperatures by adjusting the trimethylindium supply. The MQWs were inserted as active region in both optically pumped laser heterostructures and laser diodes (LDs). We found that low growth temperatures result in a reduced spatial uniformity of the luminescence emission wavelength due to well thickness variations, whereas at higher temperatures it is difficult to obtain a spatially homogeneous indium concentration. A minimum threshold power density for optically pumped lasing was found for growth temperatures of the active region between 780 and 820 °C. LDs with an MQW grown at these conditions showed an onset of lasing at a current density of 6.5 kA/cm2 with output powers of more than 350 mW.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 310, Issue 21, 15 October 2008, Pages 4525-4530
Journal: Journal of Crystal Growth - Volume 310, Issue 21, 15 October 2008, Pages 4525-4530
نویسندگان
V. Hoffmann, A. Knauer, F. Brunner, C. Netzel, U. Zeimer, S. Einfeldt, M. Weyers, G. Tränkle, J.M. Karaliunas, K. Kazlauskas, S. Jursenas, U. Jahn, J.R. van Look, M. Kneissl,