کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8032616 | 1517952 | 2018 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Low temperature method to passivate oxygen vacancies in un-doped ZnO films using atomic layer deposition
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Owing to oxygen vacancies, the as-prepared ZnO normally shows n-type semiconducting characteristic. This has restricted the preparation of high-quality p-type ZnO and the application of ZnO optoelectronic devices. Therefore, we studied a method of using H2O2 as an oxygen source to passivate oxygen vacancies (Vo) in ZnO films via atomic layer deposition (ALD). The temperature range for the self-limited growth of crystalline ZnO thin films by ALD using diethylzinc and H2O2 was found to be in the range of 80 to 150â¯Â°C. Our results show that the use of H2O2 as an oxygen source can provide an O-rich condition (instead of H2O) for the growth of ZnO film, with a total preferential (002) orientation of the growth plane and decreased grain size. Further, the O-rich growth environment can suppress the formation of Vo and zinc interstitials and decrease the carrier concentration in ZnO (from 2.525â¯Ãâ¯1019â¯cmâ3 to 1.695â¯Ãâ¯1012â¯cmâ3). This can lead to an increase in the film resistivity from 1.717â¯Ãâ¯10â2â¯Î©Â·cm for a ZnO film prepared using H2O to 1.348â¯Ãâ¯104â¯Î©Â·cm for a ZnO film prepared using H2O2. Thus, H2O2 could be used to passivate Vo in ZnO at a low temperature, and it could be beneficial for the preparation of p-type ZnO films.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 660, 30 August 2018, Pages 852-858
Journal: Thin Solid Films - Volume 660, 30 August 2018, Pages 852-858
نویسندگان
Yue Wang, Kyung-Mun Kang, Minjae Kim, Hyung-Ho Park,