کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8035468 | 1518054 | 2014 | 24 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Properties and electric characterizations of tetraethyl orthosilicate-based plasma enhanced chemical vapor deposition oxide film deposited at 400 °C for through silicon via application
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Properties and electric characterizations of tetraethyl orthosilicate-based plasma enhanced chemical vapor deposition oxide film deposited at 400 °C for through silicon via application Properties and electric characterizations of tetraethyl orthosilicate-based plasma enhanced chemical vapor deposition oxide film deposited at 400 °C for through silicon via application](/preview/png/8035468.png)
چکیده انگلیسی
The dielectric via liner of through silicon vias was deposited at 400 °C using a tetraethyl orthosilicate (TEOS)-based plasma enhanced chemical vapor deposition process in a via-middle integration scheme. The morphology, conformality and chemical compositions of the liner film were characterized using field emission scanning electron microscopy and Fourier Transform Infrared spectroscopy. The thermal properties and electrical performance of blanket TEOS films were investigated by high temperature film stress and mercury probe Capacitance-Voltage measurements. The TEOS SiO2 films show good conformality, excellent densification, low thermal stress, high breakdown voltage and low current leakage.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 550, 1 January 2014, Pages 259-263
Journal: Thin Solid Films - Volume 550, 1 January 2014, Pages 259-263
نویسندگان
Meiying Su, Daquan Yu, Yijun Liu, Lixi Wan, Chongshen Song, Fengwei Dai, Kai Xue, Xiangmeng Jing, Daniel Guidotti,