Keywords: A1 اچینگ; A1. Crystallites; A1. Etching; A1 Nanostructures; A1 Low dimensional structures; A1 Growth models;
مقالات ISI A1 اچینگ (ترجمه نشده)
مقالات زیر هنوز به فارسی ترجمه نشده اند.
در صورتی که به ترجمه آماده هر یک از مقالات زیر نیاز داشته باشید، می توانید سفارش دهید تا مترجمان با تجربه این مجموعه در اسرع وقت آن را برای شما ترجمه نمایند.
در صورتی که به ترجمه آماده هر یک از مقالات زیر نیاز داشته باشید، می توانید سفارش دهید تا مترجمان با تجربه این مجموعه در اسرع وقت آن را برای شما ترجمه نمایند.
Keywords: A1 اچینگ; A1. Solubility; A1. X-ray diffraction; A1. Etching; A2. Growth from solutions; B2. Dielectric materials; B2. Nonlinear optic materials;
Keywords: A1 اچینگ; A1. Etching; A1. Diffraction; A2. Growth from melt; B1. Metals;
Keywords: A1 اچینگ; A1. Defects; A1. Etching; A3. Chemical vapor deposition processes; B2. Semiconducting silicon;
Keywords: A1 اچینگ; A1. Etching; A1. Nucleation; A1. Solubility; A2.Growth from solutions;
Keywords: A1 اچینگ; A1. Etching; A1. Impurities; A1. Defects; B1. Diamond
Keywords: A1 اچینگ; A1. Nucleation; A1. Single crystal growth; A1. Etching; A2. Growth from solutions; B1. Lithium compounds; Solubility
Measurement and evaluation of the defects in Cd1âxZnxTe materials by observing their etch pits in real time
Keywords: A1 اچینگ; A1. Defects; A1. Etching; A1. Line defects; A1. Volume defects; B2. Semiconducting II-VI materials;
Effect of MACE parameters on length of porous silicon nanowires (PSiNWs)
Keywords: A1 اچینگ; A1. Characterization; A1. Etching; A1. Nanostructures; B1. Nanomaterials; B2. Semiconducting silicon;
Selective growth of strained (In)GaAs quantum dots on GaAs substrates employing diblock copolymer lithography nanopatterning
Keywords: A1 اچینگ; A3. Metalorganic vapor phase epitaxy; A1. Nanostructures; A3. Selective epitaxy; A1. Etching; B3. Laser diodes;
Direct observation of influence of secondary-phase defects on CZT detector response
Keywords: A1 اچینگ; A1. Defects; A1. Characterization; A1. Etching; A1. High resolution X-ray diffraction; B1. Cadmium compounds; B2. Semiconducting cadmium compounds;
Thermal etching rate of GaN during MOCVD growth interruption in hydrogen and ammonia ambient determined by AlGaN/GaN superlattice structures
Keywords: A1 اچینگ; A1. Etching; A1. Surface processes; A1. High resolution X-ray diffraction; A2. Superlattices; A3. Metalorganic chemical vapor deposition; B1. Nitrides;
Lifetime and migration length of B-related admolecules on diamond {1Â 0Â 0}-surface: Comparative study of hot-filament and microwave plasma-enhanced chemical vapor deposition
Keywords: A1 اچینگ; B1. Diamond; A3. Chemical vapor deposition processes; A1. Doping; A1. Etching; A1. Growth models; B2. Semiconducting materials;
Lateral GaN nanowire prepared by using two-step TMAH wet etching and HfO2 sidewall spacer
Keywords: A1 اچینگ; A1. Nanostructures; A1. Etching; A1. Crystal structure; A3. Metalorganic chemical vapor deposition; B1. Nitride; B2. Semiconducting gallium compounds
Chemical etching behavior of non-polar GaN sidewalls
Keywords: A1 اچینگ; A1. Etching; A1. Non-polar; B2. Gallium nitride; B2. Semiconducting III-V materials;
CBr4-based in-situ etching of GaAs, assisted with TMAl and TMGa
Keywords: A1 اچینگ; A1. Etching; A1. Defects; A3. Metalorganic vapor phase epitaxy; B1. Halides; B2. Semiconducting gallium arsenide
Unidirectional growth of non-linear optical triglycine calcium dibromide single crystal by a Sankaranaryanan–Ramasamy method
Keywords: A1 اچینگ; A1. Etching; A1. Supersaturated solutions; A2. Growth from solutions; B2. Nonlinear optic materials
The importance of structural inhomogeneity in GaN thin films
Keywords: A1 اچینگ; A1. Etching; A3. MOCVD; B1. Nitrides; Structural defects; Photoluminescence;
Relating wetting and reduction processes in the Si-liquid/SiO2-solid interface
Keywords: A1 اچینگ; A1. Reactive wetting; A1. Etching; B1. Silicon melt; B1. Silicon suboxides
Density limits of high temperature and multiple local droplet etching on AlAs
Keywords: A1 اچینگ; A1. Atomic force microscopy; A1. Etching; A1. Surface structure; A1. Nanostructure; A3. Molecular beam epitaxy; B2. Semiconducting III-V materials;
Etching effect of tertiary-butyl chloride during InP-nanowire growth
Keywords: A1 اچینگ; A1. Crystal structure; A1. Etching; A2. Growth from vapor; A3. Metalorganic vapor phase epitaxy; B1. Nanomaterials; B1. Nanowire; B2. Semiconducting indium phosphide;
Investigation on the SR method growth, etching, birefringence, laser damage threshold and thermal characterization of strontium bis (hydrogen l-malate) hexahydrate single crystal
Keywords: A1 اچینگ; A1. Etching; A1. Single crystal growth; A2. Growth from solutions; A2. Seed crystals; B2. Nonlinear optic materials
Characterization of low angle grain boundary in large sapphire crystal grown by the Kyropoulos method
Keywords: A1 اچینگ; A1. Etching; A1. X-ray topography; A2. Kyropoulos method; B1. Sapphire;
Effect of nitrogen impurity on the dislocation structure of large HPHT synthetic diamond crystals
Keywords: A1 اچینگ; A1. Etching; A1. Line defects; A1. Planar defects; A2. Single crystal growth; B1. Diamond;
In-situ decomposition and etching of AlN and GaN in the presence of HCl
Keywords: A1 اچینگ; A1. Etching; A3. Metalorganic vapor phase epitaxy; A3. Hot wall epitaxy; B1. Nitrides;
Defect selective etching of GaAsyP1ây photovoltaic materials
Keywords: A1 اچینگ; A1. Defects; A1. Etching; A3. Molecular beam epitaxy; B2. Semiconducting gallium arsenide; B2. Semiconducting III-V materials; B3. Solar cells;
Growth of InGaN/GaN core–shell structures on selectively etched GaN rods by molecular beam epitaxy
Keywords: A1 اچینگ; A1. Etching; A1. Nanostructures; A3. Molecular beam epitaxy; A3. Selective epitaxy; B1. Nitrides; B2. Semiconducting III–V materials
Crystal polarity role in Mg incorporation during GaN solution growth
Keywords: A1 اچینگ; A1. Etching; A1. Growth from solution; A1. Impurities; A2. Single crystal growth; B1. Nitrides;
Photo-etching of HVPE-grown GaN: Revealing extended non-homogeneities induced by periodic carrier gas exchange
Keywords: A1 اچینگ; A1. Crystal structure; A1. Etching; B1. Nitrides; B2. Semiconductor III-V Materials;
Vapor phase surface preparation (etching) of 4H-SiC substrates using tetrafluorosilane (SiF4) in a hydrogen ambient for SiC epitaxy
Keywords: A1 اچینگ; A1. Etching; A1. Surface processes; A3. Chemical vapor deposition processes; B2. Semiconducting materials;
Cubic GaN quantum dots embedded in zinc-blende AlN microdisks
Keywords: A1 اچینگ; A1. Etching; A1. Low dimensional structures; A1. Nanostructures; A1. Optical microscopy; A3. Molecular beam epitaxy; B1. Nitrides
Fabrication of GaN structures with embedded network of voids using pillar patterned GaN templates
Keywords: A1 اچینگ; A1. Defects; A1. Etching; A3. MOCVD; A3. Selective epitaxy; B1. Nitrides
InGaN-based solar cells with a tapered GaN structure
Keywords: A1 اچینگ; A1. Etching; B2. Semiconducting III–V materials; B3. Solar cells
Etch pit investigation of free electron concentration controlled 4H-SiC
Keywords: A1 اچینگ; A1. Characterization; A1. Doping; A1. Etching; A1. Line defects; B2. Semiconducting materials
Electrical and optical inhomogeneity in N-face GaN grown by hydride vapor phase epitaxy
Keywords: A1 اچینگ; A1. Defects; A1. Etching; A3. Hydride vapor phase epitaxy; B1. Nitrides
Dynamic and topographic observation of calcite dissolution using enhanced in-situ phase-shift interferometry
Keywords: A1 اچینگ; A1. Dissolution rate; A1. Etching; A1. Optical microscopy; A1. Surface structure; B1. Calcite; B3. Phase-shift interferometry;
Development of Cadmium Magnesium Telluride (Cd1âxMgxTe) for room temperature X- and gamma-ray detectors
Keywords: A1 اچینگ; A1. Defects; A1. Etching; B2. Semiconducting II-VI materials;
Unidirectional growth, improved structural perfection and physical properties of a semi-organic nonlinear optical dichlorobis(L-proline)zinc(II) single crystal
Keywords: A1 اچینگ; A1. X-ray diffraction; A1. Etching; A1. Optical microscopy; A2. Growth from solutions; B2. Dielectric materials
Present status of microstructured semiconductor neutron detectors
Keywords: A1 اچینگ; A1. Etching; B3. Semiconductor neutron detectors
Growth and characterization of InxBi2−xTe3 single crystals
Keywords: A1 اچینگ; A1. Layer mechanism; A1. Etching; A2. Growth from melt; A2. Single crystals growth
Etch pits of precipitates in CdZnTe crystals on (1Â 1Â 1) B surface
Keywords: A1 اچینگ; A1. Etching; A1. Volume defects; B1. Cadmium compounds; B2. Semiconducting II-VI materials;
Structural and chemical characteristics of atomically smooth GaN surfaces prepared by abrasive-free polishing with Pt catalyst
Keywords: A1 اچینگ; A1. Defects; A1. Etching; A1. Substrates; A1. Surface structure; B2. Semiconducting III–V materials
Crystal growth of rutile by tilting-mirror-type floating zone method
Keywords: A1 اچینگ; A1. Defects; A1. Etching; A1. Interface; A2. Floating zone technique; A2. Growth from melt; B1. Oxide
Effects of L-Aspartic acid on the step retreat kinetics of calcite
Keywords: A1 اچینگ; A1. Atomic force microscopy; A1. Etching; A1. Surface structure; B1. Calcium compounds; B1. Minerals; B1. Organic compounds;
Study on the in-line sputtering growth and structural properties of polycrystalline ZnO:Al on ZnO and glass
Keywords: A1 اچینگ; A1. Etching; A1. Growth models; A3. Sputtering; B2. ZnO; B3. Solar cells
SiO gas emission and triple line dynamics of small silicon droplets on quartz
Keywords: A1 اچینگ; A1. Diffusion; A1. Etching; A1. Mass transfer; B1. Quartz; B2. Semiconductor melt
Improvement of a-plane GaN crystalline quality by overgrowth of in situ etched GaN template
Keywords: A1 اچینگ; A1. Etching; A3. Metalorganic vapor phase epitaxy; B1. Nitrides; B2. Semiconducting III–V materials
In situ CBrCl3 etching to control size and density of InAs/GaAs quantum dots
Keywords: A1 اچینگ; A1. Etching; A1. Low dimensional structures; A3. Metal-organic vapor phase epitaxy; B2. Semiconducting gallium arsenide; B2. Semiconducting indium compounds
Characterization of <0Â 1Â 0> directed ammonium malate single crystals grown by Sankaranarayanan-Ramasamy method
Keywords: A1 اچینگ; A1. Recrystallization; A1. High-resolution X-ray diffraction; A1. Etching; A2. Growth from solutions; B1. Organic compounds;
Cross-sectional transmission electron microscopy of GaAs quantum dots fabricated by filling of droplet-etched nanoholes
Keywords: A1 اچینگ; A1. Etching; A1. Nanostructures; A3. Molecular beam epitaxy; B2. Semiconducting III-V materials