Comparative study of semipolar (202¯1), nonpolar (101¯0) and polar (0001) InGaN multi-quantum well structures grown under N- and In-excess by plasma assisted molecular beam epitaxy
Keywords: A3 اپیتاکسی پرتوهای مولکولی; A3. Molecular beam epitaxy; B1. Nitrides; A1. Atomic force microscopy; A1. Characterization;