Growth characteristics of ultra-thin epitaxial CaxMg1âxF2 alloys on Si(1Â 1Â 1) substrates
Keywords: A3 اپیتاکسی پرتوهای مولکولی; 81.15.Hi; 61.66.Dk; 68.55.Jk; A1. Crystal structure; A1. Reflection high-energy electron diffraction; A3. Molecular beam epitaxy; B1. Alloys; B2. Semiconducting silicon;