Keywords: نیمه هادی III-V; Next generation photovoltaics; Nanowire-based solar cells; Conductive-AFM; III-V semiconductors;
مقالات ISI نیمه هادی III-V (ترجمه نشده)
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Keywords: نیمه هادی III-V; High-k dielectrics; III-V semiconductors; Gadolinium oxide; High pressure sputtering; MIS device characterization;
Narrowing of band gap at source/drain contact scheme of nanoscale InAs-nMOS
Keywords: نیمه هادی III-V; Ab-initio; Band gap narrowing; III-V semiconductors; 1D Poisson-Schrödinger; Schottky barrier height; Density functional theory (DFT);
Atomic configurations in AP-MOVPE grown lattice-mismatched InGaAsN films unravelled by X-ray photoelectron spectroscopy combined with bulk and surface characterization techniques
Keywords: نیمه هادی III-V; III-V semiconductors; Dilute nitrides; N-bonding configuration; N-related defects; (AP)-MOVPE; ARXPS;
Modelling of the Sb and N distribution in type II GaAsSb/GaAsN superlattices for solar cell applications
Keywords: نیمه هادی III-V; Phase separation and segregation in semiconductors; 64.75.Qr; III-V semiconductors; 81.05.Ea; Transmission electron microscopy (TEM); 68.37.Lp;
Massive-scale molecular dynamics of ion-irradiated III-V compound semiconductors at the onset of nanopatterning
Keywords: نیمه هادی III-V; Nanopatterning; Ion beam nanosynthesis; III-V semiconductors; Molecular dynamics;
A substrate removal processing method for III-V solar cells compatible with low-temperature characterization
Keywords: نیمه هادی III-V; Thin film; Substrate removal; Low temperature; Concentrator solar cells; III-V semiconductors;
N-type Doping Strategies for InGaAs
Keywords: نیمه هادی III-V; III-V semiconductors; Semiconductor processing; Thermal processing; Dopant activation; Dopant diffusion;
Structural and optical characterization of GaAs and InGaAs thin films deposited by RF magnetron sputtering
Keywords: نیمه هادی III-V; III-V semiconductors; RF magnetron sputtering; Swanepoel method; SIMS;
Properties of InGaAs/GaAs metal-oxide-semiconductor heterostructure field-effect transistors modified by surface treatment
Keywords: نیمه هادی III-V; Surface treatment; III-V Semiconductors; Gallium arsenide; Heterostructure field effect transistors; Transistor characteristics; Trap state density;
Tailoring the optical properties of InAs/GaAs quantum dots by means of GaAsSb, InGaAs and InGaAsSb strain reducing layers
Keywords: نیمه هادی III-V; Quantum dots; Strain reducing layer; (InGa)(AsSb); Photoluminescence; III-V semiconductors;
Sol-gel deposition of Pb(Zr,Ti)O3 on GaAs/InGaAs quantum well heterostructure via SrTiO3 templates: Stability of the semiconductor during oxide growth
Keywords: نیمه هادی III-V; Sol-gel deposition; Lead zirconate titanate; Strontium titanate; Functional oxides; III-V semiconductors; Molecular beam epitaxy; Quantum wells;
InAs/InGaP quantum dot solar cells with an AlGaAs interlayer
Keywords: نیمه هادی III-V; Quantum dots; Solar cells; III-V semiconductors; Molecular beam epitaxy;
Development of InSb dry etch for mid-IR applications
Keywords: نیمه هادی III-V; Inductive coupled plasma; Etching; III-V semiconductors; InSb; GaSb; Microfabrication;
Influence of As/group-III flux ratio on defects formation and photovoltaic performance of GaInNAs solar cells
Keywords: نیمه هادی III-V; III-V semiconductors; Multijunction solar cells; Dilute nitrides; Material characterization; Defects; Molecular beam epitaxy;
Efficiency enhancement of axial junction InP single nanowire solar cells by dielectric coating
Keywords: نیمه هادی III-V; III-V semiconductors; Nanowire solar cells; Axial junction; Selective-area MOVPE; EBIC; Dielectric coating;
Monitoring defects in III-V materials: A nanoscale CAFM study
Keywords: نیمه هادی III-V; High mobility substrates; III-V semiconductors; Threading Dislocations; CAFM;
Structural and elastic stabilities of InN in both B4 and B1 phases under high pressure using density-functional perturbation theory
Keywords: نیمه هادی III-V; Elastic constants; III-V semiconductors; Mechanical; High pressure;
Critical process temperatures for resistive InGaAsP/InP heterostructures heavily implanted by Fe or Ga ions
Keywords: نیمه هادی III-V; III-V semiconductors; Ion implantation; Primary and secondary defects; Hall effect; X-ray diffraction;
Influence of plasma composition on reflectance anisotropy spectra for in situ III-V semiconductor dry-etch monitoring
Keywords: نیمه هادی III-V; Reflectance anisotropy spectroscopy (RAS); (Reactive) ion etching (IE; RIE); Etch depth monitoring; III-V semiconductors; Dry-etching; Plasma composition;
Piezoelectric field enhancement in III-V core-shell nanowires
Keywords: نیمه هادی III-V; III-V Semiconductors; Core shell nanowires; Piezoelectricity; Nanogenerators;
Submonolayer InGaAs/GaAs quantum dot solar cells
Keywords: نیمه هادی III-V; Solar cells; III-V semiconductors; Submonolayer; Quantum dots; Molecular beam epitaxy;
Shell to core carrier-transfer in MBE-grown GaAs/AlGaAs core-shell nanowires on Si(1Â 0Â 0) substrates
Keywords: نیمه هادی III-V; III-V semiconductors; Carrier transfer; Nanowires; Time-resolved luminescence;
Electronic properties of a single heterojunction in InSb/InAs quantum dot system
Keywords: نیمه هادی III-V; 68.37.Ps; 81.07.Ta; 81.15.Lm; 81.15.Gh; 81.16.Dn; LPE; Quantum dots; Heterostructures; III-V semiconductors; AFM; I-V characteristics;
Structural investigation of GaInP nanowires using X-ray diffraction
Keywords: نیمه هادی III-V; Nanowires; X-ray diffraction; III-V semiconductors;
Effect of an in situ hydrogen plasma pre-treatment on the reduction of GaSb native oxides prior to atomic layer deposition
Keywords: نیمه هادی III-V; GaSb; Hydrogen plasma; Atomic layer deposition; TMA; XPS; III-V semiconductors;
Surface electronic structure of InSb(001)-c(8Â ÃÂ 2)
Keywords: نیمه هادی III-V; III-V semiconductors; Surface states; Electronic structure;
Simulation of the spin polarization and the charge transport in Zener tunnel junctions based on ferromagnetic GaAs and ZnO
Keywords: نیمه هادی III-V; Magnetoelectronics; Spintronics; Spin-polarized transport in semiconductors; Junction diodes; Tunneling; III-V semiconductors; II-VI semiconductors;
Low-temperature damage formation in ion implanted InP
Keywords: نیمه هادی III-V; Ion implantation; Damage formation; III-V semiconductors; InP;
Photoelectrical characteristics of GaSb/GaInAsSb/GaAlAsSb heterojunction photodiodes under illumination by photons with wavelength of 0.95-1.0 μm
Keywords: نیمه هادی III-V; Dark currents; Type II heterojunctions; Band alignment; Liquid phase epitaxy; Photovoltaic characteristics; III-V semiconductors;
Micro Raman analysis of MOCVD grown gallium nitride epilayers irradiated with light and heavy ions
Keywords: نیمه هادی III-V; 61.80.âx; 07.85.Nc; 78.30.Fs; 61.33.20.Fb; 72.ây; Irradiation effects; XRD; III-V semiconductors; Raman spectrum; Defects;
Damage buildup and annealing characteristics in Be-implanted InAs0.93Sb0.07 film
Keywords: نیمه هادی III-V; III-V Semiconductors; Ion-implantation; HRXRD; Microstructure;
An upgraded TOF-SIMS VG Ionex IX23LS: Study on the negative secondary ion emission of III-V compound semiconductors with prior neutral cesium deposition
Keywords: نیمه هادی III-V; TOF-SIMS; III-V semiconductors; Neutral cesium deposition; Work function; Secondary ion yield enhancement; Electronegativity;
Modelling of electronic transport in Quantum Well Infrared Photodetectors
Keywords: نیمه هادی III-V; Quantum Well Infrared Photodetectors; models; III-V Semiconductors; Gallium arsenide; Dark conductivity;
Optical properties of GaAs0.9-xNxSb0.1 alloy films studied by spectroscopic ellipsometry
Keywords: نیمه هادی III-V; Dielectric function; III-V semiconductors; Optical properties;
Optical properties of Ge-As-Te thin films
Keywords: نیمه هادی III-V; III-V semiconductors; X-ray diffraction; Band structure; Chalcogenides; Optical spectroscopy; Tellurites;
Driving forces for the adsorption of cyclopentene on InP(001)
Keywords: نیمه هادی III-V; Organic molecules; InP(001); III-V semiconductors; Adsorption;
A two-dimensional electron gas as a sensitive detector to observe the charge carrier dynamics of self-assembled QDs
Keywords: نیمه هادی III-V; III-V semiconductors; Indium compounds; Self-assembly; Semiconductor quantum dots; Tunnelling; Two-dimensional electron gas;
Interfacial analysis of InP surface preparation using atomic hydrogen cleaning and Si interfacial control layers prior to MgO deposition
Keywords: نیمه هادی III-V; III-V semiconductors; InP; Atomic hydrogen; Si control layers; MgO;
Hydrogen depassivation of the magnesium acceptor by beryllium in p-type GaN
Keywords: نیمه هادی III-V; III-V semiconductors; Diffusion of impurities; Impurity co-doping; Defects and impurities in crystals; First-principles calculation;
Nitrogen-electronegativity-induced bowing character in ternary zincblende Ga1âxInxN alloys
Keywords: نیمه هادی III-V; 71.15.âm; 71.20.Nr; 71.55.Eq; 78.55.Cr; Band structure; III-V semiconductors; Photoluminescence;
SEM and XPS studies of nanohole arrays on InP(1Â 0Â 0) surfaces created by coupling AAO templates and low energy Ar+ ion sputtering
Keywords: نیمه هادی III-V; Anodized aluminum oxide (AAO); Indium phosphide (InP); Indium droplets; Nanohole-patterned surfaces (NHPS); III-V semiconductors; Ion beam; X-ray spectroscopy (XPS); Scanning electron microscopy (SEM);
Comprehensive study of InAs/GaAs quantum dots by means of complementary methods
Keywords: نیمه هادی III-V; Energy states in quantum dots; III-V semiconductors; Structural, optical and electrical properties; AFM; PL; DLTS;
Parametric dispersion and amplification in semiconductor plasmas: Effects of carrier heating
Keywords: نیمه هادی III-V; 42.65.âk; 42.65.Yj; 42.70.Mp; Parametric dispersion; Parametric amplification/gain; III-V semiconductors;
The path to stoichiometric composition of III-V binary quantum dots through plasma/ion-assisted self-assembly
Keywords: نیمه هادی III-V; Quantum dots; III-V Semiconductors; Plasma; Computer simulation; Stoichiometry; Surface diffusion; Self-assembly;
Electron counting in quantum dots
Keywords: نیمه هادی III-V; Current fluctuations; Coulomb blockade; Semiconductor quantum dots; Gallium arsenide; III-V semiconductors; Photon-electron interactions; Quantum point contacts; Aharonov-Bohm effect;
Loading indirect excitons into an electrostatic trap formed in coupled GaAs quantum wells
Keywords: نیمه هادی III-V; 71.35.ây; 71.35.Lk; 78.55.Cr; Excitons; III-V Semiconductors; Low-dimensional system; Double quantum wells;
Investigation of GaAs/InGaP superlattices for quantum well solar cells
Keywords: نیمه هادی III-V; III-V semiconductors; Quantum wells; Solar cells;
EPR and photoacoustic studies on 30Â kev H+ ion-implanted n-GaAs
Keywords: نیمه هادی III-V; 61.72.Vv; 78.30.Fs; 78.55.Cr; 78.55.âm; 81.70.Cv; 87.64.Hd; Doping and impurity implantation; III-V semiconductors; Photoluminescence; Photoacoustics; EPR;
Combined EELS, LEED and SR-XPS study of ultra-thin crystalline layers of indium nitride on InP(1 0 0)-Effect of annealing at 450 °C
Keywords: نیمه هادی III-V; 79.60.Dp; 81.65.Lp; 81.05.Ea; 79.20.Uv; 79.60.âI; 61.14.Hg; Nitridation; III-V semiconductors; Thin films; EELS; Synchrotron radiation; SR-XPS; LEED;