کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5395565 1505718 2016 10 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
3D Auger quantitative depth profiling of individual nanoscaled III-V heterostructures
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
3D Auger quantitative depth profiling of individual nanoscaled III-V heterostructures
چکیده انگلیسی
The nanoscale chemical characterization of III-V heterostructures is performed using Auger depth profiling below decananometric spatial resolution. This technique is successfully applied to quantify the elemental composition of planar and patterned III-V heterostructures containing InGaAs quantum wells. Reliable indium quantification is achieved on planar structures for thicknesses down to 9 nm. Quantitative 3D compositional depth profiles are obtained on patterned structures, for trench widths down to 200 nm. The elemental distributions obtained in averaged and pointed mode are compared. For this last case, we show that Zalar rotation during sputtering is crucial for a reliable indium quantification. Results are confirmed by comparisons with secondary ion mass spectrometry, photoluminescence spectroscopy, transmission electron microscopy and electron dispersive X-ray spectroscopy. The Auger intrinsic spatial resolution is quantitatively measured using an original methodology based on the comparison with high angle annular dark field scanning transmission electron microscopy measurements at the nanometric scale.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Electron Spectroscopy and Related Phenomena - Volume 213, November 2016, Pages 1-10
نویسندگان
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