Keywords: A2 رشد از بخار; A2. Bridgman technique; A2. Edge defined film fed growth; A2. Czochralski method; A2. Growth from vapor; B3. Radiation detectors; B1. Thallium halides;
مقالات ISI A2 رشد از بخار (ترجمه نشده)
مقالات زیر هنوز به فارسی ترجمه نشده اند.
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Keywords: A2 رشد از بخار; A1. Computer simulation; A2. Growth from vapor; B1. Ice; A1. Quasi-liquid layer of ice;
Keywords: A2 رشد از بخار; A1. Fluid flows; A1. Growth models; A1. Nucleation; A2. Growth from vapor; A3. Chemical vapor deposition processes; A3. Polysilicon production processes;
Keywords: A2 رشد از بخار; A1. Growth models; A1. Morphological stability; A1. Surface processes; A1. Surface structure; A2. Growth from vapor; B2. Semiconducting silicon;
Keywords: A2 رشد از بخار; A1. Crystal morphology; A1. Crystal structure; A1. Nucleation; A2. Growth from vapor; B1. Acids; B1. Organic compounds;
Keywords: A2 رشد از بخار; A1. Crystal structure; A2. Growth from vapor; A2. Hydrothermal crystal growth; A2. Single crystal growth; A2. Growth from solutions; B1. Inorganic compounds;
Keywords: A2 رشد از بخار; A1. Crystal morphology; A1. Growth model; A2. Growth from vapor; A3. Chemical vapor deposition processes; B1. Nanomaterials; B2. Semiconducting silicon
Keywords: A2 رشد از بخار; A1. Low dimensional structures; A2. Growth from vapor; B1. Metals; B1. Nanomaterials;
Keywords: A2 رشد از بخار; A1. Nanostructures; A2. Growth from vapor; A3. Chemical vapor deposition processes; B1 Tungstates; B1. Nanomaterials
Keywords: A2 رشد از بخار; A2. Growth from vapor; A1. Nanostructures; B1. Oxides; B1. Tungsten oxide; A3. Vapor phase epitaxy
Improvement of fast homoepitaxial growth and defect reduction techniques of thick 4H-SiC epilayers
Keywords: A2 رشد از بخار; B2. Semiconducting materials; A3. Chemical vapor deposition processes; A1. Defects; B2. Semiconducting silicon compounds; A2. Growth from vapor;
Structural characterization of the growth front of physical vapor transport grown 4H-SiC crystals using X-ray topography
Keywords: A2 رشد از بخار; A1. Defects; A1. Line defects; A1. X-ray topography; A2. Growth from vapor; B2. Semiconducting materials;
Thermal stress simulation of optimized SiC single crystal growth crucible structure
Keywords: A2 رشد از بخار; B2. SiC; A2. Growth from vapor; A1. Computer simulation; A1. Heat transfer; A1. Stresses;
In-situ growth mode control of AlN on SiC substrate by sublimation closed space technique
Keywords: A2 رشد از بخار; A1. Interfaces; Crystal morphology; Line defects; A2. Growth from vapor; B1. Nitrides;
Physical vapor transport growth of bulk Al1âxScxN single crystals
Keywords: A2 رشد از بخار; A2. Growth from vapor; A2. Single crystal growth; B1. Nitrides; B2. Semiconducting aluminum compounds; Scandium aluminum nitride; Physical vapor transport; Sublimation; Substrate;
Preparation of Cu2Sn1-xGexS3 bulk single crystals by chemical vapor transport with iodine
Keywords: A2 رشد از بخار; A1. Crystal structure; A1. X-ray diffraction; A2. Growth from vapor; A2. Single crystal growth; B1. Sulfides;
Crystal growth and evaluation of nitrogen and aluminum co-doped N-type 4H-SiC grown by physical vapor transport
Keywords: A2 رشد از بخار; A1. Defect; A1. Doping; A2. Growth from vapor; B2. Semiconducting silicon compounds;
Microstructure, growth mechanism and anisotropic resistivity of quasi-one-dimensional ZrTe5 crystal
Keywords: A2 رشد از بخار; A1. Crystal morphology; A1. Low dimensional structures; A2. Growth from vapor; A2. Single crystal growth; A3. Chemical vapor transport processes;
A yield-optimized access to double-helical SnIP via a Sn/SnI2 approach
Keywords: A2 رشد از بخار; A1. Growth models; A2. Growth from vapor; B1. Phosphides; B1. Halides; B1. Tin compounds; B2. Semiconducting ternary compound;
Hotzone design and optimization for 2-in. AlN PVT growth process through global heat transfer modeling and simulations
Keywords: A2 رشد از بخار; A1. Computer simulation; A1. Heat transfer; A1. Substrates; A2. Growth from vapor;
A new heating stage for high Temperature/low fO2 conditions
Keywords: A2 رشد از بخار; A1. Volume defects; A1. Crystal morphology; A2. Growth from vapor; A2. Natural crystal growth; B1. Minerals; B3. High temperature heating stage;
Fast growth of n-type 4H-SiC bulk crystal by gas-source method
Keywords: A2 رشد از بخار; A1. Doping; A2. Growth from vapor; A2. Industrial crystallization; A2. Single crystal growth; B2. Semiconducting silicon compounds;
Growth of P-type 4H-SiC single crystals by physical vapor transport using aluminum and nitrogen co-doping
Keywords: A2 رشد از بخار; A1. Doping; A2. Growth from vapor; A2. Single-crystal growth; B2. Semiconducting silicon compounds;
Formation of basal plane stacking faults on the (0001¯) facet of heavily nitrogen-doped 4H-SiC single crystals during physical vapor transport growth
Keywords: A2 رشد از بخار; A1. Defects; A1. Surface structure; A2. Growth from vapor; B2. Semiconducting materials;
Origin and effective reduction of inversion domains in aluminum nitride grown by a sublimation method
Keywords: A2 رشد از بخار; A1. Impurities; A1. Segregation; A2. Growth from vapor; A2. Single crystal growth; B1. Nitride; B1. Aluminum nitride;
High-pressure melt growth and transport properties of SiP, SiAs, GeP, and GeAs 2D layered semiconductors
Keywords: A2 رشد از بخار; A1. Low dimensional structures; A2. Growth from vapor; A2. High-pressure melt growth; B2. Semiconducting materials
The electrical properties of bulk GaN crystals grown by HVPE
Keywords: A2 رشد از بخار; A2. Growth from vapor; A2. Single-crystal growth; A3. Hydride vapor phase epitaxy; B2. Semiconducting III–V materials
Sublimation process and physical properties of vapor grown γ-In2Se3 platelet crystals
Keywords: A2 رشد از بخار; A1. Crystal morphology; A1. X-ray diffraction; A2. Growth from vapor; B2. Semiconducting indium compounds
Stable and high-speed SiC bulk growth without dendrites by the HTCVD method
Keywords: A2 رشد از بخار; A1. Dendrites; A2. Growth from vapor; A2. Industrial crystallization; A2. Single crystal growth; B2. Semiconducting silicon compounds
Growth of high quality mercurous halide single crystals by physical vapor transport method for AOM and radiation detection applications
Keywords: A2 رشد از بخار; A1. High resolution X-ray diffraction; A1. X-ray topography; A2. Growth from vapor; A2. Single crystal growth; B1. Halides; B2. Acousto-optic materials;
Fe-doping in hydride vapor-phase epitaxy for semi-insulating gallium nitride
Keywords: A2 رشد از بخار; A1. Doping; A2. Growth from vapor; A3. Hydride vapor phase epitaxy; B2. Semiconducting gallium compounds; B2. Semiconducting III-V materials;
Optical in-situ monitoring system for simultaneous measurement of thickness and curvature of thick layer stacks during hydride vapor phase epitaxy growth of GaN
Keywords: A2 رشد از بخار; A1. Characterization; A2. Growth from vapor; A3. Vapor phase epitaxy; B1. Nitrides; B2. Semiconducting III–V materials
Growth and structure determination of ZrSTe—A new ternary phase of transition metal chalcogenides
Keywords: A2 رشد از بخار; A1. Crystal structure; A1. X-ray diffraction; A1. Single crystal growth; A2. Growth from vapor; B1. Sulfide; B2. Semiconducting ternary compounds; Telluride
Optical properties and bonding behaviors of InSbN alloys grown by metal-organic chemical vapor deposition
Keywords: A2 رشد از بخار; A1. Characterization; A2. Growth from vapor; A3. MOCVD; B1. Antimonide; B1. Dilute nitride; B2. Semiconducting III-V material;
Vapor-solid growth of Te-rich SbTe nanowires on a template of nano-size trenches
Keywords: A2 رشد از بخار; A1. Growth models; A1. Nucleation; A1. X-ray diffraction; A2. Growth from vapor; A3. Chemical vapor deposition processes; B2. Semiconducting materials;
Optimization of AlGaN/GaN/Si(111) buffer growth conditions for nitride based HEMTs on silicon substrates
Keywords: A2 رشد از بخار; A2. Growth from vapor; B1. Nitrides; B2. Semiconducting III–V materials; B3. High electron mobility transistors
Growth of InAs nanowires with the morphology and crystal structure controlled by carrier gas flow rate
Keywords: A2 رشد از بخار; A1. Crystal morphology; A1. Low dimensional structures; A1. Nanostructures; A2. Growth from vapor; B1. Nanomaterials; B2. Semiconducting III–V material
Morphology evolution of MoS2 nanorods grown by chemical vapor deposition
Keywords: A2 رشد از بخار; A1. Nanostructures; A1. Low dimensional structures; A2. Growth from vapor; A2. Chemical vapor deposition processes;
(Ga,In)P nanowires grown without intentional catalyst
Keywords: A2 رشد از بخار; A1. Nanostructures; A2. Growth from vapor; A3. Metalorganic chemical vapor deposition; B1. Nanomaterials; B2. Semiconducting gallium indium phosphide;
Synthesis of uniformly distributed single- and double-sided zinc oxide (ZnO) nanocombs
Keywords: A2 رشد از بخار; A1. Nanostructures; A2. Growth from vapor; B2. Semiconducting II–VI materials
Chemical vapor deposition of Si:C and Si:C:P films-Evaluation of material quality as a function of C content, carrier gas and doping
Keywords: A2 رشد از بخار; A2. Growth from vapor; A2. CVD; B2. Semiconducting Silicon compounds; B3. Source drain stressors; B3. FinFETS;
Studies on sulfur doping and figure of merit in vapor grown Sb2Te3 platelet crystals
Keywords: A2 رشد از بخار; A1. Characterization; A1. Doping; A2. Growth from vapor; B2. Semiconducting materials;
In-situ observation of the growth of individual silicon wires in the zinc reduction reaction of SiCl4
Keywords: A2 رشد از بخار; A2. Growth of high temperature solutions; A2. Growth from vapor; B2. Semiconducting silicon;
Magnetic, optical and electrical characterization of SiC doped with scandium during the PVT growth
Keywords: A2 رشد از بخار; A1. Scandium dopant; A1. Characterization; A2. Growth from vapor; B2. SiC; B2. Semiconducting silicon compounds; B2. Magnetic materials
Improvement of the thermal design in the SiC PVT growth process
Keywords: A2 رشد از بخار; A1. Fluid flows; A1. Mass transfer; A2. Growth from vapor; B2. Semiconducting silicon compounds
Etching effect of tertiary-butyl chloride during InP-nanowire growth
Keywords: A2 رشد از بخار; A1. Crystal structure; A1. Etching; A2. Growth from vapor; A3. Metalorganic vapor phase epitaxy; B1. Nanomaterials; B1. Nanowire; B2. Semiconducting indium phosphide;
Growth and characterization of wurtzite GaP nanowires with control over axial and radial growth by use of HCl in-situ etching
Keywords: A2 رشد از بخار; A1. Nanostructures; A2. Growth from vapor; A3. Metal organic vapor phase epitaxy; B1. Nanomaterials;
Dislocation-density-based modeling of the plastic behavior of 4H-SiC single crystals using the Alexander-Haasen model
Keywords: A2 رشد از بخار; A1. Computer simulation; A1. Line defects; A1. Stresses; A2. Growth from vapor;
KMC simulation of growth and equilibration of V-shaped patterned crystal surface via step motion
Keywords: A2 رشد از بخار; A1. Computer simulation; A1. Crystal morphology; A1. Diffusion; A1. Low dimensional structures; A1. Nucleation; A2. Growth from vapor;
Polytypism in SiC: Theory and experiment
Keywords: A2 رشد از بخار; A1. Growth models; A2. Growth from vapor; A2. Single crystal growth; B1. Silicon carbide; B2. Semiconducting silicon compounds