Keywords: B2 مواد نیمه هادی; A1. X-ray diffraction; A3. Metal-organic chemical vapor deposition; B1. Oxides; B2. Semiconducting materials;
مقالات ISI B2 مواد نیمه هادی (ترجمه نشده)
مقالات زیر هنوز به فارسی ترجمه نشده اند.
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در صورتی که به ترجمه آماده هر یک از مقالات زیر نیاز داشته باشید، می توانید سفارش دهید تا مترجمان با تجربه این مجموعه در اسرع وقت آن را برای شما ترجمه نمایند.
Keywords: B2 مواد نیمه هادی; A1. Solvent; A1. X-ray diffraction; A2. Single crystal growth; B1. Organic compounds; B2. Semiconducting materials;
Keywords: B2 مواد نیمه هادی; A1. Growth models; A1. Heat transfer; A3. Chemical vapor deposition processes; A3. Selective epitaxy; B2. Semiconducting materials;
Keywords: B2 مواد نیمه هادی; A1. Crystal morphology; A1. Diffusion; A1. Mass transfer; A1. Surface structure; A1. Surface processes; B2. Semiconducting materials;
Keywords: B2 مواد نیمه هادی; A1. Crystal morphology; A1. Diffusion; A1. Mass transfer; A1. Surface structure; A1. Surface processes; B2. Semiconducting materials;
Keywords: B2 مواد نیمه هادی; XRD; X-ray diffraction; SEM; scanning electron microscopy; TEM; transmission electron microscopy; EDS; energy dispersive spectroscopy; TC; texture coefficient; A1. Nanostructures; A1. Radiation; B1. Halides; B2. Semiconducting materials;
Keywords: B2 مواد نیمه هادی; A3. Molecular beam epitaxy; B2. Semiconducting materials;
Keywords: B2 مواد نیمه هادی; A1. Crystallization; A3. Solid phase epitaxy; B1. Germanium; B2. Semiconducting materials;
Keywords: B2 مواد نیمه هادی; A1. Adsorption; A1. Crystal structure; B1. Nitrides; B2. Semiconducting materials
Keywords: B2 مواد نیمه هادی; A1. Nanostructures; A1. X-ray diffraction; B1. Nanomaterials; B1. Oxides; B2. Semiconducting materials
Improvement of fast homoepitaxial growth and defect reduction techniques of thick 4H-SiC epilayers
Keywords: B2 مواد نیمه هادی; B2. Semiconducting materials; A3. Chemical vapor deposition processes; A1. Defects; B2. Semiconducting silicon compounds; A2. Growth from vapor;
Efficiency improvement of TiO2 nanowire arrays based dye-sensitized solar cells through further enhancing the specific surface area
Keywords: B2 مواد نیمه هادی; A1. Nanostructures; A1. Surface structure; A1. Surface processes; B1. Oxides; B2. Semiconducting materials; B3. Solar cells;
Synthesis and electrical transport properties of Bi2O2Se single crystals
Keywords: B2 مواد نیمه هادی; B1. Bithmus compound; A1. Crystal structure; B2. Semiconducting materials; A1. Magnetic field;
The influence of temperature on the silicon droplet evolution in the homoepitaxial growth of 4H-SiC
Keywords: B2 مواد نیمه هادی; A1. Surfaces; A1. Defects; A3. Chemical vapor deposition processes; B2. Semiconducting materials; B2. Semiconducting silicon compounds;
Purification and crystal growth of NPB via imidazolium based ionic liquids
Keywords: B2 مواد نیمه هادی; A1. Purification; A1. Recrystallization; A2. Growth from solution; B1. Organic compounds; B2. Semiconducting materials; B3. Light emitting diodes;
GeSn growth kinetics in reduced pressure chemical vapor deposition from Ge2H6 and SnCl4
Keywords: B2 مواد نیمه هادی; A3. Chemical vapor deposition processes; B1. Alloys; B2. Semiconducting materials; A1. X-ray diffraction; A1. Atomic force microscopy;
Structural characterization of the growth front of physical vapor transport grown 4H-SiC crystals using X-ray topography
Keywords: B2 مواد نیمه هادی; A1. Defects; A1. Line defects; A1. X-ray topography; A2. Growth from vapor; B2. Semiconducting materials;
The effect of Na on Cu-K-In-Se thin film growth
Keywords: B2 مواد نیمه هادی; A1. Crystal morphology; A1. Segregation; A1. Solid solutions; A3. Physical vapor deposition processes; B1. Alloys; B2. Semiconducting materials;
Low-temperature MOCVD deposition of Bi2Te3 thin films using Et2BiTeEt as single source precursor
Keywords: B2 مواد نیمه هادی; A3. Metalorganic chemical vapor deposition; B1. Bismuth compounds; B1. Tellurides; B1. Nanomaterials; B2. Semiconducting materials;
Crystal growth and magneto-transport behavior of PdS1âδ
Keywords: B2 مواد نیمه هادی; A2. Single crystal growth; A2. Modified flux method; B1. PdS; B2. Semiconducting materials; B2. Negative magnetoresistance;
Efficient iron doping of HVPE GaN
Keywords: B2 مواد نیمه هادی; A1. Characterization; A1. Impurities; A1. X-ray diffraction; A3. Hydride vapor phase epitaxy; B1. Nitrides; B2. Semiconducting materials;
MBE growth of few-layer 2H-MoTe2 on 3D substrates
Keywords: B2 مواد نیمه هادی; A3. Molecular beam epitaxy; B1. Tellurites; B2. Semiconducting materials; A1. X-ray diffraction;
Hg1âxCdxTe vapor deposition on CdZnTe substrates by Closed Space Sublimation technique
Keywords: B2 مواد نیمه هادی; A3. Physical vapor deposition processes; B1. Cadmium compounds; B1. CdZnTe; B1. HgCdTe; B2. Semiconducting materials; B3. Infrared devices;
Control of native acceptor density in epitaxial Cu2O thin films grown by electrochemical deposition
Keywords: B2 مواد نیمه هادی; A1. Thin film growth; A3. Electrochemical deposition; A3. Solution growth; B1. Cuprite; B2. Semiconducting materials; B3. Solar cells;
Orientation of Zn3P2 films via phosphidation of Zn precursors
Keywords: B2 مواد نیمه هادی; A3. Polycrystalline deposition; B1. Phosphides; B2. Semiconducting materials; B3. Solar cells;
Comparative study on Ga1âxZnxN1âyOy oxynitride synthesized by different techniques for application in photocatalytic hydrogen production
Keywords: B2 مواد نیمه هادی; B1. Nitrides; B1. Oxides; B1. Nano materials; B2. Semiconducting materials;
Microstructural study of codeposited pentacene:perfluoropentacene grown on KCl by TEM techniques
Keywords: B2 مواد نیمه هادی; A1. Crystal morphology; A1. Transmission electron microscopy; B1. Organic compounds; B1. Pentacene; B1. Perfluoropentacene; B2. Semiconducting materials;
Physical modelling of Czochralski crystal growth in horizontal magnetic field
Keywords: B2 مواد نیمه هادی; A1. Fluid flows; A1. Heat transfer; A2. Magnetic field assisted Czochralski method; B2. Semiconducting materials;
Codeposited pentacene:perfluoropentacene grown on SiO2: A microstructural study by transmission electron microscopy
Keywords: B2 مواد نیمه هادی; A1. Crystal morphology; A1. Transmission electron microscopy; B1. Organic compounds; B1. Pentacene; B1. Perfluoropentacene; B2. Semiconducting materials;
Bismuth amides as promising ALD precursors for Bi2Te3 films
Keywords: B2 مواد نیمه هادی; A3. Atomic layer epitaxy; B1. Bismuth compounds; B1. Tellurites; B2. Semiconducting materials;
Synthesis of nanocrystalline TiO2 nanorods via hydrothermal method: An efficient photoanode material for dye sensitized solar cells
Keywords: B2 مواد نیمه هادی; A1. Crystal structure; A1. Nanostructures; A1. X-ray diffraction; A2. Hydrothermal crystal growth; B2. Semiconducting materials; B3. Solar cells;
Copper iodide synthesized by iodization of Cu-films and deposited using MOCVD
Keywords: B2 مواد نیمه هادی; A3. Metalorganic chemical vapor deposition; A3. Polycrystalline deposition; B1. Halides; B2. Semiconducting materials;
Study of crystallization processes in Bi-doped As2S3 chalcogenide glasses using linear isoconversion and isokinetic methods
Keywords: B2 مواد نیمه هادی; A1. Solid solutions; X-ray diffraction; Nucleation; B1. Glasses; B2. Semiconducting materials;
Heteroepitaxial growth and electric properties of (110)-oriented scandium nitride films
Keywords: B2 مواد نیمه هادی; A1. Crystal structure; A3. Molecular beam epitaxy; B1. Nitrides; B2. Semiconducting materials;
Effects of hydrogen on the structural and optical properties of MoSe2 grown by hot filament chemical vapor deposition
Keywords: B2 مواد نیمه هادی; A1. Nanostructures; A3. Chemical vapor deposition processes; B1. Inorganic compounds; B2. Semiconducting materials;
Capillary stability of vapor-liquid-solid crystallization processes and their comparison to Czochralski and Stepanov growth methods
Keywords: B2 مواد نیمه هادی; A1. Nanostructures; A1. Growth models; B1. Nanowires; B1. Nanomaterials; B2. Semiconducting materials; B2. Semiconducting silicon; B2. Semiconducting III-V materials;
Formation of basal plane stacking faults on the (0001¯) facet of heavily nitrogen-doped 4H-SiC single crystals during physical vapor transport growth
Keywords: B2 مواد نیمه هادی; A1. Defects; A1. Surface structure; A2. Growth from vapor; B2. Semiconducting materials;
Lifetime and migration length of B-related admolecules on diamond {1Â 0Â 0}-surface: Comparative study of hot-filament and microwave plasma-enhanced chemical vapor deposition
Keywords: B2 مواد نیمه هادی; B1. Diamond; A3. Chemical vapor deposition processes; A1. Doping; A1. Etching; A1. Growth models; B2. Semiconducting materials;
Non-polar a-plane ZnO films grown on r-Al2O3 substrates using GaN buffer layers
Keywords: B2 مواد نیمه هادی; A1. Crystal structure; A3. Molecular beam epitaxy; B1. Zinc compounds; B2. Semiconducting materials
Structural and optical properties of anatase TiO2 heteroepitaxial films prepared by MOCVD
Keywords: B2 مواد نیمه هادی; A1. Crystal structure; A3. Metalorganic chemical vapor deposition; B1. Titanium compounds; B2. Semiconducting materials
Effect of ramping on oxygen precipitates and Cu–vacancy complex in Czochralski silicon
Keywords: B2 مواد نیمه هادی; A1. Impurities; A1. Radiation; A2. Defects; B2. Semiconducting materials
Plasma assisted molecular beam epitaxy of Cu2O on MgO(001): Influence of copper flux on epitaxial orientation
Keywords: B2 مواد نیمه هادی; A1. Surface structure; A1. High resolution X-ray diffraction; A3. Molecular beam epitaxy; B1. Oxides; B2. Semiconducting materials
High-pressure melt growth and transport properties of SiP, SiAs, GeP, and GeAs 2D layered semiconductors
Keywords: B2 مواد نیمه هادی; A1. Low dimensional structures; A2. Growth from vapor; A2. High-pressure melt growth; B2. Semiconducting materials
Ionic liquid-assisted growth of DBTTF-TCNQ complex organic crystals by vacuum co-deposition
Keywords: B2 مواد نیمه هادی; A1. Crystal morphology; A2. Growth from solutions; A3. Physical vapor deposition processes; B1. Organic compounds; B2. Semiconducting materials; B3. Solar cells;
Hydrothermal fabrication of multi-functional Eu3+ and Tb3+ co-doped BiPO4: Photocatalytic activity and tunable luminescence properties
Keywords: B2 مواد نیمه هادی; A1. Nanostructures; B1. Nanomaterials; B2. Semiconducting materials
Growth optimization and applicability of thick on-axis SiC layers using sublimation epitaxy in vacuum
Keywords: B2 مواد نیمه هادی; A1. Mass transfer; A1. Substrates; A2. Single crystal growth; B2. Semiconducting materials;
Pulsed electric field assisted sol–gel preparation of TiO2 nanoparticles
Keywords: B2 مواد نیمه هادی; A1. Nucleation; A1. Characterization; B1. Nanomaterials; B1. Titanium compounds; B2. Semiconducting materials
Characterization of structural defects in SnSe2 thin films grown by molecular beam epitaxy on GaAs (111)B substrates
Keywords: B2 مواد نیمه هادی; A1. Characterization; A1. Crystal structure; A3. Molecular beam epitaxy; B2. Semiconducting materials
Growth mechanism of single-crystalline NiO thin films grown by metal organic chemical vapor deposition
Keywords: B2 مواد نیمه هادی; A3. Metalorganic chemical vapor deposition; B1. Oxides; B2. Semiconducting materials
Growth and characterization of WSe2 single crystals using TeCl4 as transport agent
Keywords: B2 مواد نیمه هادی; A1. Characterization; A1. Crystal morphology; A2. Single crystal growth; B1. Inorganic compounds; B2. Semiconducting materials; B3. Solar cells