Refractive indexes and extinction coefficients of n- and p-type doped GaInP, AlInP and AlGaInP for multijunction solar cells
Keywords: بیضه سنجی طیف سنجی; III-V semiconductor layers; Multijunction solar cells; Spectroscopic ellipsometry; Order parameter; Doped-GaInP (-AlInP, -AlGaInP);